2N657S-Transistor Overview
The 2N657S is a high-voltage NPN bipolar junction transistor designed for switching and amplification applications in industrial and electronic circuits. Its robust structure supports collector-emitter voltages up to 300 V, making it suitable for medium-power applications requiring reliable operation under demanding electrical conditions. This transistor offers a balance of gain and voltage rating, ensuring stable performance in control circuits, power supplies, and general-purpose amplification. Sourced from a reputable IC Manufacturer, it meets stringent quality standards for durability and efficiency, providing engineers and sourcing specialists with a dependable semiconductor component for diverse industrial technology projects.
2N657S-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 300 V |
| Collector-Base Voltage (VCBO) | 300 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 1 A (maximum) |
| Power Dissipation (Ptot) | 30 W |
| DC Current Gain (hFE) | 40 to 160 |
| Transition Frequency (fT) | 15 MHz (typical) |
| Package Type | TO-18 Metal Can |
2N657S-Transistor Key Features
- High Voltage Capability: Supports collector-emitter voltages up to 300 V, enabling use in medium-power high-voltage circuits.
- Reliable Current Handling: Handles collector currents up to 1 A, suitable for switching and amplification without thermal runaway concerns.
- Wide Gain Range: Offers DC current gain from 40 to 160, providing flexibility for varied amplification needs in analog designs.
- Robust Power Dissipation: With a 30 W maximum rating, it enables efficient heat dissipation for stable long-term operation.
- Metal Can Package: TO-18 packaging enhances thermal conductivity and mechanical durability, ideal for industrial environments.
Typical Applications
- Switching elements in power supplies and voltage regulators, where high voltage tolerance and reliable switching are critical for stable operation.
- Amplifier stages in audio and signal processing circuits requiring medium power handling and consistent gain.
- Industrial control circuits that demand rugged transistor performance under varying load and voltage conditions.
- General-purpose electronic equipment such as relay drivers and interface circuits, benefiting from the transistor??s high voltage and current capabilities.
2N657S-Transistor Advantages vs Typical Alternatives
This transistor offers a superior voltage rating of 300 V combined with a reliable 1 A current capacity, outperforming many standard low-voltage alternatives. Its wide gain range and robust power dissipation enable precise amplification and efficient switching under industrial conditions. Packaged in a TO-18 metal can, it provides enhanced thermal management and mechanical durability, ensuring improved reliability compared to plastic-encapsulated devices commonly used in similar roles.
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2N657S-Transistor Brand Info
The 2N657S transistor is a legacy device originally standardized under JEDEC, produced by multiple semiconductor manufacturers adhering to stringent industry specifications. It is recognized for its consistent electrical characteristics and reliability, making it a trusted choice in industrial and general electronics. While various suppliers may offer this transistor, its design and performance parameters remain consistent, ensuring interchangeability and dependable sourcing for engineers and procurement professionals.
FAQ
What is the maximum collector-emitter voltage for this transistor?
The maximum collector-emitter voltage (VCEO) is 300 volts, allowing it to operate safely in medium to high-voltage circuits without risk of breakdown under normal conditions.
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Can this transistor handle continuous high current loads?
It can handle collector currents up to 1 ampere, making it suitable for continuous medium power applications. Proper heat sinking is recommended to maintain safe operating temperatures during sustained current flow.
