2N656-Transistor NPN Power Amplifier Transistor in TO-66 Metal Can Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling improved control in electronic circuits.
  • Its maximum voltage rating ensures safe operation under typical circuit conditions.
  • The compact package design allows for efficient use of board space in dense assemblies.
  • Ideal for switching applications, it enhances performance in power regulation systems.
  • Manufactured to meet standard reliability criteria, ensuring consistent function over time.
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2N656-Transistor Overview

The 2N656 is a silicon NPN bipolar junction transistor designed for medium power amplification and switching applications. It offers reliable performance within a collector-emitter voltage rating of 60V and a collector current capacity up to 1.5A, making it suitable for a broad range of industrial and consumer electronics. Its moderate gain and power dissipation characteristics ensure stable operation in linear amplifier circuits and switching environments. Manufactured to meet stringent quality standards, this transistor is an ideal choice for engineers seeking a durable, cost-effective solution for signal amplification and control in low to medium power electronic systems. For detailed sourcing, visit IC Manufacturer.

2N656-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN Bipolar Junction
Collector-Emitter Voltage (VCEO) 60 Volts
Collector Current (IC) 1.5 Amperes
Power Dissipation (PD) 30 Watts
DC Current Gain (hFE) 40 – 100 Unitless
Transition Frequency (fT) 30 MHz
Junction Temperature (Tj) +150 ??C
Package Type TO-39 Metal Can

2N656-Transistor Key Features

  • High Collector Current Capability: Supports up to 1.5A allowing robust switching and amplification for medium power circuits.
  • Moderate Voltage Rating: 60V collector-emitter voltage rating ensures safe operation in a range of power supply voltages common in industrial electronics.
  • Reliable Power Dissipation: Handles up to 30W of power dissipation with appropriate heat sinking, enhancing durability under continuous load.
  • Wide Gain Range: DC current gain between 40 and 100 offers flexibility for amplification stages requiring moderate gain.
  • Standard TO-39 Package: Facilitates thermal management and easy integration into through-hole PCB designs.

Typical Applications

  • Signal amplification in audio and intermediate frequency (IF) stages, where stable gain and moderate power handling are critical for maintaining signal integrity.
  • Switching devices in power control circuits, including relay drivers and motor control applications, benefiting from the transistor’s current capacity.
  • Low to medium power linear amplifiers in consumer and industrial electronics, where consistent performance and reliability are required.
  • General-purpose electronic circuits requiring a robust NPN transistor for driving loads or interfacing with logic-level signals.

2N656-Transistor Advantages vs Typical Alternatives

This transistor stands out with its balanced combination of moderate voltage and current ratings, making it versatile for diverse applications compared to alternatives that may be limited by lower power dissipation or gain. Its TO-39 metal can package offers enhanced thermal performance and mechanical robustness, aiding long-term reliability. The broad gain range also allows engineers to tailor amplification stages precisely, improving circuit efficiency and reducing signal distortion in comparison to generic transistors.

2N656-Transistor Brand Info

The 2N656 transistor is a legacy semiconductor device widely produced by multiple manufacturers adhering to JEDEC standard specifications. It is commonly available from established IC manufacturers specializing in bipolar junction transistors for industrial and consumer applications. These manufacturers ensure consistent quality and reliability, offering the device in the standard TO-39 package that has been a benchmark for through-hole transistors since its introduction. The device??s robust construction and standardized specifications make it a dependable choice for engineers sourcing medium power NPN transistors.

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