2N5336-Transistor Overview
The 2N5336 is a PNP silicon transistor designed for general-purpose amplification and switching applications. It offers reliable performance in medium power circuits, featuring a maximum collector current rating that supports a wide range of industrial and consumer electronics uses. Known for its robust construction and stable gain characteristics, this transistor ensures consistent operation across varying operating conditions. Its compatibility with standard TO-39 metal can packaging aids in efficient thermal management and mechanical durability. Engineers and sourcing specialists seeking dependable transistor solutions will find this device suitable for amplifier stages, driver circuits, and switching applications. For detailed manufacturing and sourcing information, visit IC Manufacturer.
2N5336-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | PNP Silicon Transistor |
| Collector-Emitter Voltage (VCEO) | -60 V |
| Collector-Base Voltage (VCBO) | -60 V |
| Emitter-Base Voltage (VEBO) | -5 V |
| Collector Current (IC) | -1.5 A |
| Power Dissipation (PT) | 1.0 W |
| DC Current Gain (hFE) | 30 to 100 |
| Transition Frequency (fT) | 30 MHz (typical) |
| Package | TO-39 Metal Can |
2N5336-Transistor Key Features
- Medium power handling: Supports collector currents up to 1.5 A, enabling effective use in power amplifier and switching circuits.
- High voltage tolerance: Rated for up to 60 V collector-emitter and collector-base voltages, ensuring reliability in various industrial applications.
- Stable DC current gain: Gain range from 30 to 100 offers flexibility for precise amplification control in analog circuits.
- Robust packaging: The TO-39 metal can package enhances thermal dissipation and mechanical durability, improving device longevity under stress conditions.
Typical Applications
- Used primarily in audio amplifier circuits where medium power and stable gain are required for linear signal amplification.
- Suitable for driver stages in relay and solenoid control circuits, providing reliable switching capabilities.
- Applicable in general-purpose switching circuits for industrial control systems requiring moderate voltage and current handling.
- Employed in low-frequency oscillator circuits and signal processing applications where consistent transistor behavior is critical.
2N5336-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of voltage tolerance, current capacity, and gain stability, making it advantageous over typical low-power or low-voltage alternatives. Its 1.5 A collector current rating and 60 V voltage capability provide greater operational margin while maintaining reliable performance. The metal can TO-39 package enhances thermal management, resulting in improved durability and long-term reliability compared to plastic-encapsulated devices. These factors make it a preferred choice for engineers seeking consistent, medium-power transistor solutions in amplification and switching roles.
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2N5336-Transistor Brand Info
The 2N5336 transistor is a legacy discrete semiconductor device originally introduced by Motorola Semiconductor Products Sector, now part of ON Semiconductor and widely available through multiple semiconductor manufacturers and distributors. It is recognized as a standard PNP silicon transistor with a metal can TO-39 package, often used in educational, industrial, and legacy electronic designs. Due to its established specifications and robust construction, it remains a dependable component for engineers sourcing proven transistor solutions in global markets.
FAQ
What is the maximum collector current rating of this transistor?
The device supports a maximum collector current of 1.5 amperes, allowing it to handle moderate power loads in amplification and switching applications without compromising reliability.
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What type of packaging does the transistor use, and why is it significant?
It is housed in a TO-39 metal can package, which offers superior thermal dissipation and mechanical strength compared to plastic packages, enhancing performance stability under thermal stress.
Can this transistor be used for high-frequency applications?
While







