2N718A-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling efficient switching and signal control in circuits.
  • Featuring a high gain value, it ensures strong signal amplification for improved circuit performance.
  • Its compact package design supports board-space savings in dense electronic assemblies.
  • Ideal for low-power audio amplifiers, where precise signal control enhances sound clarity and fidelity.
  • Manufactured with quality standards to provide stable operation and long-term reliability in various conditions.
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2N718A-Transistor Overview

The 2N718A is a high-frequency NPN silicon transistor designed primarily for general-purpose amplification and switching applications. Its robust construction and reliable performance make it suitable for circuits requiring dependable gain and fast switching speeds. Commonly used in industrial electronics and communication devices, this transistor offers consistent electrical characteristics that support linear and digital circuit designs. Engineers and sourcing specialists value its stable operation across a range of temperatures and voltages. For detailed sourcing and technical assistance, visit IC Manufacturer.

2N718A-Transistor Technical Specifications

Parameter Value Unit
Type NPN Silicon
Collector-Emitter Voltage (VCEO) 30 V
Collector-Base Voltage (VCBO) 40 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 50 mA
Power Dissipation (Ptot) 400 mW
Transition Frequency (fT) 250 MHz
DC Current Gain (hFE) 40 – 300
Operating Temperature Range -65 to +200 ??C
Package Type TO-18 Metal Can

2N718A-Transistor Key Features

  • High transition frequency: Offers up to 250 MHz for efficient amplification in RF and high-speed switching circuits.
  • Wide operating voltage range: Supports collector-emitter voltages up to 30 V, allowing flexibility in various circuit conditions.
  • Robust power dissipation: Can handle up to 400 mW, ensuring reliable operation in moderate power applications without thermal stress.
  • Stable DC current gain: Provides a gain range of 40 to 300, suitable for diverse amplification needs with consistent performance.

Typical Applications

  • High-frequency amplifier stages in radio frequency (RF) circuits, enabling clear signal amplification with minimal distortion.
  • Switching applications in digital logic circuits where rapid response times are critical for system performance.
  • Oscillator circuits used for generating stable frequency signals in communication and timing devices.
  • Small-signal amplification in sensor interfaces and low-power audio amplification systems.

2N718A-Transistor Advantages vs Typical Alternatives

This transistor stands out for its combination of high transition frequency and power dissipation capacity, making it well-suited for both RF and switching applications. Compared to typical alternatives, it offers a broad gain range and stable operation across a wide temperature spectrum. These features contribute to enhanced circuit reliability and flexibility, helping engineers optimize designs for performance and durability in industrial electronics.

2N718A-Transistor Brand Info

The 2N718A is a widely recognized transistor originally developed and popularized by multiple semiconductor manufacturers specializing in silicon discrete components. It is often found under various brands due to its standardization and long-standing industry usage. This transistor is characterized by its metal can TO-18 package, a hallmark of quality and reliability in legacy and contemporary electronic designs. Its proven track record ensures steady availability from reputable suppliers, supporting both new designs and maintenance of legacy systems.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current rating is 50 mA. This ensures the transistor can handle moderate current loads

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