2N5416S-Transistor Overview
The 2N5416S is a PNP silicon transistor designed for medium power amplification and switching applications. Engineered for reliable performance in industrial environments, it delivers stable operation up to a collector-to-emitter voltage of 60 V and collector current of 600 mA. This transistor features robust gain characteristics and low noise, making it suitable for audio amplification and general-purpose circuits. Its TO-39 metal can package ensures efficient heat dissipation and mechanical durability. The device is a proven choice for engineers seeking a dependable transistor with consistent electrical parameters. For sourcing and detailed specifications, visit IC Manufacturer.
2N5416S-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | PNP Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (Vceo) | 60 V |
| Collector Current (Ic) | 600 mA |
| Collector Dissipation (Pc) | 1 W (typical) |
| DC Current Gain (hFE) | 40 to 160 (varies with Ic) |
| Transition Frequency (fT) | ~30 MHz (typical) |
| Junction Temperature (Tj) | 150 ??C |
| Package Type | TO-39 Metal Can |
2N5416S-Transistor Key Features
- Medium power handling: Supports up to 600 mA collector current enabling effective amplification and switching in moderate power circuits.
- High voltage tolerance: Collector-emitter voltage rating of 60 V ensures robust operation in a variety of industrial and audio applications.
- Low noise performance: Ideal for audio frequency amplification and sensitive signal processing requiring minimal distortion.
- Durable TO-39 package: Enhances thermal dissipation and mechanical reliability for long-term use in demanding environments.
Typical Applications
- Audio amplifier stages where consistent gain and low noise are critical for signal integrity in professional and consumer equipment.
- General-purpose switching in control circuits requiring medium power handling and reliable operation under varying loads.
- Industrial instrumentation for signal amplification, benefiting from the transistor??s voltage and current ratings.
- Driver circuits in relay and solenoid control applications, leveraging the device??s robust electrical characteristics.
2N5416S-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of voltage tolerance and current capacity that exceeds many low-power general-purpose BJTs. Its low noise and stable gain characteristics provide improved accuracy and reliability in amplification tasks compared to standard transistors. The rugged TO-39 packaging enhances thermal management and mechanical durability, making it a superior choice for industrial applications where environmental stresses are a concern.
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2N5416S-Transistor Brand Info
The 2N5416S transistor has been historically manufactured by reputable semiconductor suppliers such as ON Semiconductor and Fairchild Semiconductor. These manufacturers are known for producing reliable discrete components widely used in industrial and commercial electronics. The transistor adheres to JEDEC standards ensuring interchangeability and consistent quality. Its legacy and continued availability make it a trusted component in design and sourcing for engineers requiring proven performance in medium power amplification and switching.
FAQ
What is the maximum collector current rating for this transistor?
The maximum continuous collector current for this transistor is rated at 600 mA. This allows it to handle moderate power levels suitable for amplification and switching tasks without risking device damage under normal operating conditions.
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Can this transistor be used in high-frequency applications?
While this device has a transition frequency around 30 MHz, it is primarily suited for audio and low to medium frequency applications rather than very high-frequency RF circuits. Its characteristics favor stability and low noise in typical industrial and audio frequency ranges.
What type of package does the transistor come in?
The transistor is supplied in a TO-39 metal can package, which provides excellent thermal conductivity and mechanical robustness. This packaging helps maintain device reliability in environments with increased thermal







