2N6299E3-Transistor Overview
The 2N6299E3 is a high-power NPN silicon transistor designed for medium-to-high current switching and amplification in industrial and electronic applications. It offers robust performance with a collector current rating up to 30A and a collector-emitter voltage of 100V, making it suitable for demanding power control environments. Its TO-3 package ensures excellent thermal dissipation, enhancing reliability under heavy load conditions. Engineers and sourcing specialists will find this transistor ideal for power regulation, motor control, and audio amplification. For more detailed product information and sourcing options, visit IC Manufacturer.
2N6299E3-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Silicon |
| Collector-Emitter Voltage (Vceo) | 100 V |
| Collector Current (Ic) | 30 A |
| Power Dissipation (Pc) | 200 W (max) |
| DC Current Gain (hFE) | 20 to 70 (varies by test condition) |
| Transition Frequency (fT) | 3 MHz (typical) |
| Collector-Base Voltage (Vcbo) | 120 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Package Type | TO-3 Metal Can |
2N6299E3-Transistor Key Features
- High current capability: Supports collector currents up to 30A, enabling efficient handling of large loads in power circuits.
- Robust voltage ratings: Collector-emitter voltage rating of 100V provides flexibility in medium-voltage applications.
- Superior thermal management: TO-3 metal package offers excellent heat dissipation, increasing operational reliability and lifespan.
- Moderate gain and frequency response: Suitable for linear amplification and switching roles in industrial electronics.
Typical Applications
- Power amplifier stages in audio and RF systems requiring high current handling and thermal stability.
- Motor control circuits where robust switching performance and voltage tolerance are essential.
- Voltage regulation and power supply circuits, leveraging its high power dissipation and voltage ratings.
- Industrial switching applications demanding reliable transistor operation under heavy load conditions.
2N6299E3-Transistor Advantages vs Typical Alternatives
This transistor stands out with its high collector current rating and durable TO-3 package, offering enhanced thermal dissipation compared to typical plastic-encapsulated alternatives. The combination of a 100V voltage rating and 30A current capacity makes it well-suited for demanding industrial power applications. Its reliable gain characteristics and rugged design improve overall circuit stability and longevity, providing sourcing specialists and engineers with a robust alternative for medium-power amplification and switching tasks.
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2N6299E3-Transistor Brand Info
The 2N6299E3 is a widely recognized transistor originally introduced by semiconductor manufacturers such as ON Semiconductor and Motorola, now part of Nexperia and other major global suppliers. This transistor is produced under strict quality control standards to meet industrial requirements. The E3 suffix indicates specific packaging and screening for enhanced reliability. It remains a favored choice in industrial electronics for its proven performance and availability through authorized distributors worldwide.
FAQ
What is the maximum collector current rating of this transistor?
The maximum collector current rating is 30 amperes, allowing the transistor to handle substantial load currents in power amplification and switching applications without degradation.
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What type of package does the 2N6299E3 use, and why is it important?
It uses a TO-3 metal can package, which provides superior heat dissipation compared to plastic packages. This ensures reliable operation and prevents thermal overload during high-power use.
Can this transistor be used in high-frequency applications?
While it has a transition frequency around 3 MHz, it is primarily designed for medium-frequency power switching and amplification rather than high-frequency RF applications.
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What voltage limits should engineers observe to avoid damage?
The collector-emitter voltage should not exceed 100V, the collector-base voltage is limited to 120V, and the emitter-base voltage should remain below 5V






