JANTXV2N5416S-Transistor NPN Power Transistor in TO-3 Package ?C JAN Military Grade

JANTXV2N5416S-Transistor Overview

The JANTXV2N5416S transistor is a high-performance NPN bipolar junction transistor designed for applications requiring robust switching and amplification capabilities. Rated for high voltage and current handling, it operates efficiently within demanding industrial environments. The transistor features a collector-emitter voltage rating of 100V and a collector current capacity of up to 10A, making it suitable for power regulation and signal control tasks. Its rugged JANTX military-grade construction ensures enhanced reliability and thermal stability. Engineers and sourcing specialists can rely on this device for precision control in power management circuits and switching applications. For further product details, visit the IC Manufacturer.

JANTXV2N5416S-Transistor Technical Specifications

JANTXV2N5416S-Transistor Key Features

• High Collector Current Capacity: Supports up to 10A, enabling efficient handling of substantial load currents in power switching applications.
• High Breakdown Voltage: Withstands collector-emitter voltages up to 100V, suitable for high-voltage industrial circuits requiring robust voltage tolerance.
• Military-Grade Reliability: JANTX designation ensures strict quality and reliability standards, providing exceptional durability in harsh or critical environments.
• Wide Operating Temperature Range: Ensures stable performance from -65??C to +200??C, ideal for extreme temperature applications.

Typical Applications

• Power Amplification in industrial control systems where high current and voltage switching are necessary to drive loads reliably.
• Switching regulators and power converters that benefit from the transistor??s high power dissipation and gain characteristics.
• Motor control circuits requiring rugged transistors capable of handling transient conditions and high currents.
• High-reliability military and aerospace electronics where device longevity and performance under stress are critical.

JANTXV2N5416S-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current handling compared to typical low-power BJTs, making it ideal for demanding industrial and military applications. Its JANTX military-grade packaging ensures higher reliability and thermal performance, reducing failure rates in critical environments. The higher power dissipation rating and wide temperature tolerance provide engineers with a device that maintains consistent performance under extreme operating conditions, outperforming many commercial-grade alternatives.

JANTXV2N5416S-Transistor Brand Info

The JANTXV2N5416S is manufactured under stringent military standards by reputable semiconductor suppliers specializing in high-reliability discrete components. The JANTX prefix indicates compliance with MIL-STD-19500 requirements, ensuring rugged construction, long-term stability, and traceability. This transistor is commonly sourced from legacy suppliers who focus on aerospace and defense markets, delivering devices built to withstand harsh environments and demanding electrical stresses.

FAQ

What are the key electrical ratings of the JANTXV2N5416S transistor?

This transistor has a maximum collector-emitter voltage of 100V and a collector current rating of 10A. It can dissipate up to 75W of power and operates reliably across a wide temperature range from -65??C to +200??C, making it suitable for high-power and high-temperature applications.

Application	Aerospace and Defense, Automotive Electronics, Industrial Automation