JANTXV2N2369AUB-Transistor NPN RF Amplifier Transistor in TO-39 Metal Can Package

  • This transistor controls electrical current flow efficiently, enabling precise signal amplification or switching.
  • Its voltage rating supports stable operation under varying electrical loads, ensuring consistent performance.
  • The compact package design allows easy integration on densely populated circuit boards, saving valuable space.
  • Ideal for use in power management circuits, it helps maintain system stability and energy efficiency.
  • Manufactured to meet strict quality standards, it offers reliable operation in demanding electronic environments.
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JANTXV2N2369AUB-Transistor Overview

The JANTXV2N2369AUB is a military-grade NPN bipolar junction transistor designed for high-reliability applications requiring robust performance under harsh conditions. It features a high voltage rating, low saturation voltage, and consistent gain characteristics, making it suitable for signal amplification and switching tasks in aerospace, defense, and industrial electronics. This transistor is built to meet stringent JAN (Joint Army-Navy) standards, ensuring durability and long-term operational stability. Its compatibility with standard TO-18 packaging and well-documented electrical parameters make it a dependable component for engineers and sourcing specialists seeking quality and traceability in their semiconductor choices. For detailed sourcing and technical support, visit IC Manufacturer.

JANTXV2N2369AUB-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN
Collector-Emitter Voltage (V_CEO) 60 V
Collector-Base Voltage (V_CBO) 60 V
Emitter-Base Voltage (V_EBO) 5 V
Collector Current (I_C) 0.5 A
Power Dissipation (P_TOT) 0.8 W
DC Current Gain (h_FE) 40 to 300
Transition Frequency (f_T) 100 MHz
Operating Temperature Range -55 to +200 ??C
Package Type TO-18 Metal Can

JANTXV2N2369AUB-Transistor Key Features

  • High voltage tolerance: With a collector-emitter voltage rating of 60 V, it supports a wide range of circuit designs requiring moderate voltage handling.
  • Wide current gain range: The DC current gain between 40 and 300 allows for flexible amplification levels, enabling precise signal control and switching performance.
  • High-frequency operation: Transition frequency up to 100 MHz ensures suitability for RF amplification and fast switching applications.
  • Robust thermal performance: Operating temperature up to 200??C supports use in extreme environments, enhancing reliability in aerospace or military electronics.
  • Military-specification grade: Compliance with JAN standards guarantees durability, traceability, and consistent performance under harsh operating conditions.

Typical Applications

  • Signal amplification in military and aerospace communication systems requiring stable gain and low noise performance under demanding conditions.
  • Switching elements in high-reliability industrial control circuits where long-term durability at elevated temperatures is critical.
  • RF oscillator and driver stages benefiting from the device??s high transition frequency and gain characteristics.
  • Low-level audio amplifiers and sensor interface circuits where precision and repeatable transistor parameters are necessary.

JANTXV2N2369AUB-Transistor Advantages vs Typical Alternatives

Compared to standard commercial transistors, this military-grade transistor offers superior reliability, extended temperature range, and consistent electrical parameters backed by JAN certification. Its broad current gain and high-frequency response deliver enhanced sensitivity and accuracy for critical applications. The metal TO-18 package ensures excellent thermal dissipation and mechanical robustness, making it a preferred choice for defense and aerospace engineers seeking dependable semiconductor components.

JANTXV2N2369AUB-Transistor Brand Info

The JANTXV2N2369AUB is a military-qualified variant of the popular 2N2369 transistor, produced under the Joint Army-Navy (JAN) standard. This designation indicates rigorous testing and screening to meet strict military requirements for environmental and electrical performance. The original 2N2369 transistor was introduced by various semiconductor manufacturers, but the JAN prefix signifies a higher reliability level, often supplied by trusted vendors specializing in defense-grade semiconductors. This product is recognized for its stable gain, high-frequency capabilities, and robust metal package, providing long-term operational stability in demanding applications.

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