JANKCBR2N2907A-Transistor-Die Overview
The JANKCBR2N2907A-Transistor-Die is a high-performance PNP bipolar junction transistor (BJT) die designed for efficient signal amplification and switching applications. Optimized for industrial and commercial electronics, this transistor die offers reliable operation with robust electrical characteristics. Its compact die format facilitates integration into custom semiconductor packages or hybrid circuits, providing flexibility for engineers and sourcing specialists. Manufactured under stringent quality controls, it ensures consistent performance in demanding environments. For detailed procurement and technical support, refer to IC Manufacturer.
JANKCBR2N2907A-Transistor-Die Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP Bipolar Junction Transistor | – |
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector Current (IC) | 800 | mA |
| Power Dissipation (Ptot) | 625 | mW |
| DC Current Gain (hFE) | 100?C300 | ?C |
| Transition Frequency (fT) | 100 | MHz |
| Junction Temperature (TJ) | 150 | ??C |
| Package | Die (bare silicon) | – |
JANKCBR2N2907A-Transistor-Die Key Features
- High Current Handling: Supports collector currents up to 800mA, enabling robust amplification in moderate power circuits.
- Wide Voltage Range: Rated for collector-emitter voltages up to 60V, suitable for various industrial voltage levels.
- Excellent Gain Performance: Features a DC current gain between 100 and 300, providing efficient signal amplification with low distortion.
- High Transition Frequency: Operates at frequencies up to 100MHz, making it adaptable for high-speed switching and RF applications.
- Thermal Reliability: Maintains junction temperatures up to 150??C, ensuring durability in harsh operating conditions.
- Compact Die Format: Bare die form allows flexible packaging and integration into custom semiconductor modules or hybrid circuits.
- Consistent Manufacturing Quality: Produced with precise process controls to guarantee uniform electrical characteristics and reliability.
Typical Applications
- Signal amplification in audio and industrial control circuits requiring reliable PNP transistor operation with stable gain.
- Switching applications in power management systems where efficient transistor die switching improves overall system responsiveness.
- Integration into hybrid modules or custom semiconductor packages for tailored electronic solutions.
- Use in RF amplifier stages and driver circuits benefiting from high transition frequency performance.
JANKCBR2N2907A-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers enhanced current capabilities and voltage tolerance compared to many standard PNP transistor dies, delivering improved sensitivity and accuracy in signal amplification. Its high transition frequency and compact die format make it ideal for integration in custom and hybrid circuits where space and performance are critical. The robust thermal rating and consistent manufacturing quality ensure reliable operation, providing a strong advantage in industrial electronics over less stable alternatives.
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JANKCBR2N2907A-Transistor-Die Brand Info
The JANKCBR2N2907A transistor die is part of the 2N2907 family, a widely recognized series of PNP BJTs used extensively in industrial and commercial electronic systems. This specific die version is produced by a reputable semiconductor manufacturer specializing in discrete components for high-reliability applications. The brand emphasizes stringent quality assurance and testing protocols to maintain performance standards.
