JANKCBR2N2222A-Transistor-Die Overview
The JANKCBR2N2222A-Transistor-Die is a high-performance NPN bipolar junction transistor die designed for versatile switching and amplification tasks in industrial and electronic applications. This transistor die offers reliable current gain and fast switching speeds, making it suitable for low to medium power circuits. It delivers a balanced combination of voltage, current, and power ratings, ensuring efficient performance in compact electronic assemblies. Sourced from a reputable IC Manufacturer, this transistor die is optimized for integration into custom semiconductor packages and hybrid circuits, supporting engineers and sourcing specialists in precise component selection and design flexibility.
JANKCBR2N2222A-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector Current (IC) | 800 mA |
| Power Dissipation (Ptot) | 625 mW (die level) |
| DC Current Gain (hFE) | 100 ?C 300 (typical) |
| Transition Frequency (fT) | 300 MHz (typical) |
| Base-Emitter Voltage (VBE) | 0.7 V (typical) |
| Package Type | Transistor Die (bare die for custom packaging) |
JANKCBR2N2222A-Transistor-Die Key Features
- High Current Gain: Provides stable amplification with hFE values typically between 100 and 300, ensuring efficient signal boosting in analog and digital circuits.
- Fast Transition Frequency: Supports operation up to 300 MHz, enabling rapid switching suitable for high-speed applications and RF circuits.
- Compact Bare Die Format: Allows flexible integration into custom semiconductor packages, hybrid circuits, or multi-chip modules, streamlining design and assembly.
- Robust Voltage and Power Ratings: Withstands collector-emitter voltages up to 40 V and power dissipation of 625 mW, ensuring reliable performance in diverse operating conditions.
Typical Applications
- Switching circuits in industrial control systems, where reliable transistor operation at moderate currents and voltages is critical for automation and process control.
- Signal amplification in low to medium power analog stages within communication and instrumentation equipment.
- High-speed switching in driver circuits for LED displays, relays, and solenoids requiring fast response times and stable gain.
- Integration into custom semiconductor modules and hybrid microelectronic assemblies, enabling tailored solutions for specialized electronic designs.
JANKCBR2N2222A-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers precise control over gain and switching parameters compared to generic transistor packages. Its bare die format enables more compact, integrated designs and better thermal management in hybrid circuits. The high transition frequency and robust voltage ratings deliver enhanced performance and reliability, making it a preferred choice for engineers requiring consistent switching speed and gain in demanding industrial and electronic applications.
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JANKCBR2N2222A-Transistor-Die Brand Info
The JANKCBR2N2222A transistor die is produced by JANK Semiconductor, a recognized supplier specializing in discrete semiconductor components. Known for manufacturing high-quality transistor dies optimized for integration into custom packages, JANK Semiconductor supports applications in industrial automation, consumer electronics, and communications. Their focus on reliability, consistent electrical performance, and compatibility with various packaging technologies ensures that this transistor die meets stringent design and sourcing requirements.
FAQ
What is the primary function of the JANKCBR2N2222A transistor die?
The primary function of this transistor die is to act as an NPN bipolar junction transistor used for amplification and switching applications. It is designed to handle moderate currents and voltages
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