JANKCCR2N2222A-Transistor-Die NPN Amplifier Transistor – Die Package by JANKCCR

JANKCCR2N2222A-Transistor-Die Overview

The JANKCCR2N2222A transistor die is a high-performance NPN bipolar junction transistor (BJT) designed for versatile switching and amplification applications. This transistor die offers reliable operation with a maximum collector current of 800 mA and a collector-emitter voltage rating of 40 V, making it suitable for moderate power electronic circuits. Its die form factor enables integration into custom semiconductor modules or hybrid circuits where space and thermal management are critical. Engineered for robust gain characteristics and switching speed, this transistor die is ideal for signal processing, driver stages, and general-purpose amplification. For precision and reliability in industrial applications, source this product from IC Manufacturer.

JANKCCR2N2222A-Transistor-Die Technical Specifications

JANKCCR2N2222A-Transistor-Die Key Features

• High Current Handling: Supports collector currents up to 800 mA, enabling efficient switching and amplification in medium-power circuits.
• Voltage Ratings: Collector-emitter voltage up to 40 V allows for use in a wide range of low- to mid-voltage applications.
• Fast Switching Speed: Transition frequency around 300 MHz ensures rapid response, critical for signal processing and high-frequency amplification.
• Compact Die Format: The bare silicon die format facilitates custom packaging and integration into hybrid circuits, optimizing space and thermal design.

Typical Applications

• General-purpose amplification and switching in industrial control circuits, providing reliable transistor performance in custom modules.
• Driver stage for relay and small motor control applications requiring robust current gain and switching capability.
• Signal amplification in audio preamplifiers or sensor interface circuits where linearity and gain are essential.
• High-frequency oscillator and pulse generation circuits benefiting from the transistor’s fast switching characteristics.

JANKCCR2N2222A-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers a balance of voltage, current, and switching speed that outperforms many generic alternatives. Its bare die form enables superior thermal management and integration flexibility compared to packaged transistors. The high gain and transition frequency support efficient amplification and switching, while the robust voltage ratings provide reliability in diverse industrial environments. These advantages make it a preferred choice when precision and compact integration are critical.

JANKCCR2N2222A-Transistor-Die Brand Info

The JANKCCR2N2222A transistor die is manufactured by JANKC Semiconductor, a company known for producing high-quality discrete semiconductor components optimized for industrial and commercial electronics. JANKC specializes in transistor dies and custom semiconductor solutions, catering to engineers and OEMs requiring flexible component formats for integration into hybrid circuits and advanced assemblies. This product upholds the brand??s reputation for reliability, performance, and consistency in demanding electronic applications.

FAQ

What is the maximum collector current specification for this transistor die?

The maximum collector current for the device is rated at 800 mA. This allows the transistor to handle moderate power levels suitable for switching and amplification in various industrial circuits.