JANKCBM2N2907A-Transistor-Die Overview
The JANKCBM2N2907A-Transistor-Die is a high-performance PNP bipolar junction transistor (BJT) die designed for a broad range of industrial and electronic applications. Offering reliable amplification and switching capabilities, this transistor die is optimized for medium power and low frequency operation. Its robust electrical characteristics and compact die form make it suitable for integration into custom semiconductor assemblies and hybrid ICs. Engineered for durability and efficiency, the device supports precise current control, making it an essential component for engineers and sourcing specialists seeking quality transistor dies from a trusted IC Manufacturer.
JANKCBM2N2907A-Transistor-Die Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | PNP Bipolar Junction Transistor |
| Maximum Collector-Emitter Voltage (VCEO) | 60 V |
| Maximum Collector Current (IC) | 600 mA |
| Power Dissipation (Ptot) | 800 mW (die level) |
| Current Gain (hFE) | 100 to 300 (typical) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package Type | Bare Die (for hybrid IC assembly) |
| Operating Temperature Range | -55??C to +150??C |
| Collector-Base Voltage (VCBO) | 60 V |
| Base-Emitter Voltage (VBE) | 5 V (max) |
JANKCBM2N2907A-Transistor-Die Key Features
- Robust PNP transistor design: Enables efficient current amplification suitable for medium power switching applications.
- High voltage tolerance: Supports collector-emitter voltage up to 60 V, accommodating a wide range of circuit requirements.
- Compact bare die format: Facilitates easy integration into custom hybrid circuits and semiconductor modules.
- Wide operating temperature range: Ensures reliable performance in harsh industrial and automotive environments.
- Consistent current gain: Provides predictable amplification, improving design accuracy and circuit stability.
Typical Applications
- General purpose amplification and switching in power management circuits, where reliable medium power handling is essential.
- Signal processing in industrial control systems requiring stable, low noise transistor operation.
- Integration into hybrid integrated circuits and custom semiconductor assemblies for specialized electronic equipment.
- Use in automotive electronics for controlling loads and interfacing analog signals under varying temperature conditions.
JANKCBM2N2907A-Transistor-Die Advantages vs Typical Alternatives
This transistor die offers superior voltage handling and current gain consistency compared to typical discrete transistors in similar classes. Its bare die format provides engineers with flexibility for integration into compact, custom semiconductor modules. The robust thermal and electrical parameters enhance reliability and efficiency, making it a preferred choice over standard packaged transistors when precision and space constraints are critical.
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JANKCBM2N2907A-Transistor-Die Brand Info
The JANKCBM2N2907A transistor die is a semiconductor component aligned with the well-established 2N2907A device family, widely recognized in the electronics industry for its dependable PNP transistor functionality. It is typically sourced from manufacturers specializing in discrete transistor dies and hybrid circuit components. This product is used extensively by IC manufacturers and semiconductor integrators who require high-quality bare dies for custom assembly. Its reputation is built on consistent electrical performance, making it a standard choice for industrial-grade transistor applications.
FAQ
What type of transistor is the JANKCBM2N2907A die?
The device is a PNP bipolar junction transistor (BJT) die, designed for medium power amplification and switching tasks. It operates with a typical current gain between 100 and 300 and supports voltage levels suitable for various industrial applications.
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Can this transistor die be used in high-frequency circuits?
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