JANKCD2N2907A-Transistor-Die PNP Bipolar Junction Transistor Die – Semiconductor Chip

JANKCD2N2907A-Transistor-Die Overview

The JANKCD2N2907A transistor die is a high-performance PNP bipolar junction transistor designed for a wide range of industrial and electronic applications. This transistor die offers robust current handling and voltage ratings, ensuring reliable operation in amplification and switching circuits. Its compact die form factor enables easy integration into custom semiconductor packages or hybrid circuits. Tailored for engineers and sourcing specialists, this transistor die delivers stable electrical characteristics and thermal performance, making it suitable for precision analog designs and power management solutions. For detailed support and procurement, visit the IC Manufacturer.

JANKCD2N2907A-Transistor-Die Technical Specifications

JANKCD2N2907A-Transistor-Die Key Features

• High Voltage and Current Handling: Enables robust switching and amplification in demanding industrial circuits.
• Compact Die Format: Facilitates custom packaging and integration in space-constrained electronic assemblies.
• Wide Operating Temperature Range: Ensures reliable performance in harsh environments, including automotive and industrial controls.
• Consistent Gain Performance: Provides predictable analog circuit operation with hFE between 100 and 300.

Typical Applications

• Power amplification stages in audio and signal processing equipment where stable gain and low noise are essential.
• Switching elements in low to medium power supply circuits requiring durable transistors.
• Driver stages in relay and solenoid control circuits for industrial automation systems.
• Temperature-resilient components in automotive electronics and power management modules.

JANKCD2N2907A-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers superior current and voltage ratings compared to many standard PNP BJTs, providing enhanced reliability and robustness in industrial applications. Its bare die format supports improved thermal dissipation and flexible integration into custom semiconductor packages, which is advantageous over pre-packaged devices. The device??s wide operating temperature range and consistent gain performance make it a dependable choice for engineers prioritizing long-term stability and precision in harsh operating conditions.

JANKCD2N2907A-Transistor-Die Brand Info

The JANKCD2N2907A transistor die is a derivative of the widely recognized 2N2907A series, originally introduced by major semiconductor manufacturers such as ON Semiconductor and Fairchild. These transistors are known for their durability and versatility in discrete analog and switching applications. While the die itself may be produced by specialized semiconductor foundries or IC manufacturers, the 2N2907A family is a staple in the electronics industry, supported by extensive datasheets and application notes. This bare die version caters to electronics engineers and manufacturers seeking custom packaging solutions or direct die-level integration for specialized industrial uses.

FAQ

What are the main electrical limitations of the JANKCD2N2907A transistor die?

The transistor die supports a maximum collector-emitter voltage of 60 V and a collector current up to 800 mA. Power dissipation is limited to 800 mW, and the base-emitter voltage should not exceed 5 V to maintain device integrity and avoid breakdown.

Can this transistor die be used in high-frequency applications?

Yes, with a typical transition frequency (fT) around