JANKCBL2N2907A-Transistor-Die PNP Bipolar Junction Transistor Silicon Die – Unpackaged

JANKCBL2N2907A-Transistor-Die Overview

The JANKCBL2N2907A-Transistor-Die is a high-performance PNP bipolar junction transistor die designed for general-purpose amplification and switching applications. Its silicon die construction ensures reliable operation across a wide range of electrical parameters, making it suitable for industrial and consumer electronic circuits. This transistor die exhibits stable gain characteristics and efficient current handling capabilities, supporting robust signal integrity in analog and digital circuits. Optimized for integration within custom semiconductor assemblies, it offers engineers precise control over amplification properties. For trusted supply and detailed technical support, visit IC Manufacturer.

JANKCBL2N2907A-Transistor-Die Technical Specifications

JANKCBL2N2907A-Transistor-Die Key Features

• High collector current capability: Supports up to 600 mA for demanding amplification and switching tasks.
• Wide voltage rating: Collector-emitter voltage rating of 60 V enables use in medium voltage circuits.
• Stable gain performance: DC current gain ranges from 100 to 300, ensuring consistent amplification across operating conditions.
• High-frequency response: Transition frequency of 100 MHz allows use in moderate-speed analog circuits and signal processing.
• Robust thermal tolerance: Rated for operation up to 150??C, enhancing reliability in harsh industrial environments.
• Compact die format: Optimized for integration into custom IC packages or hybrid assemblies, facilitating design flexibility.

Typical Applications

• Signal amplification in audio and intermediate-frequency stages of consumer electronics and industrial equipment.
• Switching components in power management circuits requiring moderate current and voltage handling.
• Driver stages for relay control and transistor-transistor logic (TTL) level shifting circuits.
• General-purpose transistor die for semiconductor assembly in custom analog and digital circuit designs.

JANKCBL2N2907A-Transistor-Die Advantages vs Typical Alternatives

This transistor die offers a balanced mix of voltage, current, and gain characteristics that outperform many standard PNP transistor dies in similar formats. Its higher temperature tolerance and frequency response make it a reliable choice for demanding industrial applications. Compared with typical alternatives, it delivers better integration potential and consistent electrical parameters, reducing circuit variability and improving overall system performance.

JANKCBL2N2907A-Transistor-Die Brand Info

The JANKCBL2N2907A transistor die corresponds to a well-established semiconductor technology lineage rooted in the classic 2N2907A transistor family, widely recognized in the electronics industry for dependable PNP transistor performance. This die variant is manufactured by a trusted semiconductor supplier specializing in discrete transistor components and die-level products designed for integration into custom modules and hybrid circuits. The brand emphasizes quality control, consistency, and compatibility with standard transistor specifications to ensure seamless replacement and design adoption.

FAQ

What is the maximum collector current rating for this transistor die?

The maximum collector current rating is 600 mA, allowing the transistor die to handle moderate current loads in amplification and switching applications without degradation.

Can this transistor die be used in high-frequency circuits?

Yes, with a transition frequency of approximately 100 MHz