JANTXV2N3419-Transistor NPN Power Transistor in TO-3 Package ?C High Gain Switching

  • This transistor amplifies electrical signals, enabling efficient switching and control in circuits.
  • Its voltage and current ratings support stable operation under varied electrical loads and conditions.
  • The compact package design allows for easy integration in space-constrained electronic boards.
  • Ideal for use in signal processing applications, improving response time and overall device performance.
  • Manufactured with quality controls that ensure long-term reliability and consistent functionality.
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JANTXV2N3419-Transistor Overview

The JANTXV2N3419 transistor is a high-performance NPN bipolar junction transistor designed for military and aerospace applications requiring stringent reliability and extended temperature range. Built to MIL-PRF-19500 standards, this transistor offers robust operation from ?C55??C to +125??C, ensuring stable performance in harsh environments. Its high current gain and voltage handling capabilities make it suitable for switching and amplification tasks in defense-grade electronic circuits. The device is packaged in a hermetically sealed TO-39 metal can, supporting long-term durability and protection from environmental factors. For sourcing and detailed technical data, visit IC Manufacturer.

JANTXV2N3419-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 120 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 0.8 A
DC Current Gain (hFE) 40 to 160
Power Dissipation (Ptot) 1.0 W
Operating Temperature Range ?C55 to +125 ??C
Package Type TO-39 Metal Can

JANTXV2N3419-Transistor Key Features

  • Military-Grade Reliability: Meets MIL-PRF-19500 standards ensuring consistent operation in extreme thermal and mechanical stress conditions.
  • High Voltage Rating: Supports collector-emitter voltages up to 100V, allowing use in moderate to high voltage switching applications.
  • Wide Operating Temperature Range: Functionality from ?C55??C to +125??C accommodates demanding environments such as aerospace and defense electronics.
  • Hermetically Sealed TO-39 Package: Provides superior protection against moisture and contaminants, enhancing long-term reliability.

Typical Applications

  • Used in military and aerospace amplifier circuits where high reliability and thermal stability are critical for mission success and safety.
  • Ideal for ruggedized switching devices in industrial control systems operating under harsh environmental conditions.
  • Suitable for signal processing and interface circuits requiring stable gain and low noise performance across temperature extremes.
  • Applicable in precision instrumentation where device durability and consistent electrical characteristics are mandatory.

JANTXV2N3419-Transistor Advantages vs Typical Alternatives

This transistor stands out due to its stringent military qualification, offering enhanced reliability and extended temperature tolerance compared to commercial-grade counterparts. Its hermetic TO-39 packaging ensures superior environmental protection, reducing failure rates in critical systems. The broad voltage and current ratings provide design flexibility, while stable gain performance improves circuit accuracy. These factors collectively make it a preferred choice for engineers demanding ruggedness and longevity in defense and aerospace electronics.

JANTXV2N3419-Transistor Brand Info

The JANTXV2N3419 transistor is manufactured under the JANTX series, a product line known for stringent military standards compliance. Typically produced by reputable semiconductor manufacturers specializing in defense-grade components, these transistors adhere to MIL-PRF-19500 specifications, ensuring high quality and reliability. The brand emphasizes hermetic packaging and thorough screening to meet aerospace and military operational demands, making it a trusted component in high-reliability electronic assemblies.

FAQ

What type of transistor is the JANTXV2N3419?

The device is an NPN bipolar junction transistor, designed primarily for switching and amplification in military and aerospace environments. It is qualified to meet MIL-PRF-19500 standards, ensuring robust performance under demanding conditions.

What is the maximum collector-emitter voltage rating of this transistor?

This transistor can handle a collector-emitter voltage (

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