JANTXV2N2905-Transistor Overview
The JANTXV2N2905 is a rugged, high-reliability PNP bipolar junction transistor designed for military and aerospace applications requiring stringent quality standards. It operates with a maximum collector current of 600 mA and a collector-emitter voltage rating of 60 V. This transistor is part of the JAN (Joint Army-Navy) series, ensuring compliance with rigorous testing and environmental requirements, ideal for robust industrial and defense systems. With its robust construction and stable electrical characteristics, the device supports reliable switching and amplification in demanding conditions. For more detailed information, visit IC Manufacturer.
JANTXV2N2905-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP Bipolar Junction | – |
| Collector-Emitter Voltage (V_CEO) | 60 | V |
| Collector-Base Voltage (V_CBO) | 60 | V |
| Emitter-Base Voltage (V_EBO) | 5 | V |
| Collector Current (I_C) | 600 | mA |
| Power Dissipation (P_TOT) | 800 | mW |
| DC Current Gain (h_FE) | 40 to 300 | – |
| Transition Frequency (f_T) | 100 | MHz |
| Operating Temperature Range | -55 to +200 | ??C |
JANTXV2N2905-Transistor Key Features
- High collector current capacity: Supports up to 600 mA, enabling robust switching and amplification in power-sensitive circuits.
- Wide voltage ratings: Collector-emitter and collector-base voltages up to 60 V provide flexibility for various industrial and military applications.
- Extended temperature range: Operates reliably from -55??C to +200??C, suitable for harsh environments and elevated temperature conditions.
- JAN quality and reliability: Manufactured to rigorous military standards ensuring long-term durability and performance consistency.
Typical Applications
- Used in military and aerospace equipment requiring high-reliability transistor switching under extreme temperature and mechanical stress conditions.
- Suitable for industrial control systems where precise amplification and switching of moderate power signals are essential.
- Employed in power management circuits for defense communication devices due to its robust voltage and current capabilities.
- Ideal for ruggedized instrumentation amplifiers and signal conditioning in harsh operating environments.
JANTXV2N2905-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability and ruggedness compared to standard commercial PNP devices, meeting stringent military standards for quality and performance. Its extended operating temperature range and higher power dissipation capabilities make it an optimal choice where environmental resilience and electrical robustness are critical. These advantages translate into enhanced system stability, longer service life, and reduced risk of failure in demanding industrial and defense applications.
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JANTXV2N2905-Transistor Brand Info
The JANTXV2N2905 is manufactured under the JAN (Joint Army-Navy) certification, a hallmark for semiconductor devices designed to meet stringent military specifications. This classification ensures that the transistor undergoes rigorous screening and testing processes for temperature, vibration, and electrical stress. Typically produced by established semiconductor manufacturers specializing in military-grade components, the device is trusted for applications requiring dependable performance and traceability. The JAN certification aligns with MIL-PRF-19500 standards, making this transistor a preferred choice for defense and aerospace engineers.
FAQ
What type of transistor is the JANTXV2N2905?
The device is a PNP bipolar junction transistor designed for high-reliability applications. It offers medium power switching capabilities and amplification suitable for military and industrial environments.
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What are the voltage and current ratings for this transistor?
The transistor supports a maximum collector-emitter voltage of 60 V and a collector current up to 600 mA. These ratings enable it to handle moderate power levels in various electronic circuits.
