JANTX2N3741-Transistor NPN Power Transistor in TO-66 Metal Can Package ?C ON Semiconductor

  • This transistor amplifies electrical signals, enabling efficient switching and control in circuits.
  • The device’s voltage rating supports stable operation under varying electrical loads.
  • Its compact package design allows for board-space savings in dense electronic assemblies.
  • Ideal for signal amplification in communication devices, ensuring clear and reliable performance.
  • Manufactured to meet strict quality standards, promoting long-term reliability in applications.
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JANTX2N3741-Transistor Overview

The JANTX2N3741 is a high-performance NPN bipolar junction transistor designed for military and aerospace applications requiring superior reliability and robustness. Engineered to meet stringent JAN (Joint Army-Navy) standards, this transistor ensures stable operation under extreme conditions with enhanced gain and voltage handling capabilities. It features a maximum collector-base voltage of 80 V and collector current rating up to 200 mA, making it suitable for switching and amplification tasks in demanding environments. Available in a hermetically sealed TO-18 metal package, this device provides excellent thermal conductivity and mechanical protection. For precision and durability in critical electronic circuits, the JANTX2N3741 offers a trusted solution from IC Manufacturer.

JANTX2N3741-Transistor Technical Specifications

Parameter Value Unit Description
Polarity NPN Type of transistor conduction
Collector-Base Voltage (VCBO) 80 V Maximum voltage between collector and base
Collector-Emitter Voltage (VCEO) 60 V Maximum voltage between collector and emitter
Emitter-Base Voltage (VEBO) 7 V Maximum voltage between emitter and base
Collector Current (IC) 200 mA Maximum continuous collector current
Power Dissipation (Pc) 625 mW Maximum power dissipation at 25??C
DC Current Gain (hFE) 30 to 70 Typical gain at IC=10 mA, VCE=5 V
Transition Frequency (fT) 100 MHz Frequency at which gain drops to unity
Operating Temperature Range -65 to +200 ??C Junction temperature range for reliable operation

JANTX2N3741-Transistor Key Features

  • High voltage handling: With a collector-base voltage rating of 80 V, it supports robust switching and amplification in high-voltage circuits.
  • Reliable military-grade construction: The hermetic TO-18 metal package ensures exceptional protection against environmental stress, enhancing device longevity.
  • Wide operating temperature range: Certified to operate from -65??C up to +200??C, enabling use in harsh aerospace and defense applications.
  • Consistent current gain: Provides a stable DC current gain between 30 and 70, ensuring predictable performance in analog signal processing.

Typical Applications

  • Used in high-reliability switching circuits and amplifiers within aerospace and military communication equipment where device failure is not an option.
  • Suitable for signal amplification in industrial control systems requiring stable transistor parameters over wide temperature ranges.
  • Ideal for small-signal amplification in radar and avionics subsystems, supporting accurate signal processing at RF frequencies.
  • Applied in ruggedized instrumentation and sensor interface circuits demanding hermetic sealing and enhanced thermal management.

JANTX2N3741-Transistor Advantages vs Typical Alternatives

This transistor stands out against typical commercial alternatives by meeting stringent JAN military standards, offering superior reliability and durability under extreme thermal and mechanical conditions. Its hermetic metal package significantly reduces the risk of environmental degradation, while the wide operating temperature range and robust voltage ratings ensure consistent operation in critical industrial and defense systems. These attributes combine to provide enhanced sensitivity and accuracy, making it a preferred choice for mission-critical applications.

JANTX2N3741

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