JANTXV2N3418-Transistor High Voltage NPN Transistor in TO-18 Metal Can Package

  • This transistor controls current flow efficiently, enabling precise signal amplification and switching in electronic circuits.
  • Its high voltage rating ensures stable operation under demanding electrical conditions, reducing the risk of device failure.
  • The compact package design allows for board-space savings, making it suitable for dense circuit layouts.
  • Ideal for power regulation in automotive or industrial systems, it enhances overall system reliability and performance.
  • Manufactured to meet strict quality standards, this model offers consistent performance and long-term durability.
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JANTXV2N3418-Transistor Overview

The JANTXV2N3418 transistor is a high-performance silicon NPN bipolar junction transistor designed for rugged military and industrial applications. Known for its enhanced voltage and current handling capabilities, this transistor excels in switching and amplification tasks within demanding environments. It is manufactured to meet stringent JAN (Joint Army-Navy) standards, ensuring reliability and stability under harsh conditions such as extreme temperature variations and mechanical stress. Engineers and sourcing specialists rely on this transistor for applications requiring robust semiconductor components with proven durability and consistent electrical characteristics. For precise component sourcing and detailed specifications, visit IC Manufacturer.

JANTXV2N3418-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (V_CEO) 100 V
Collector-Base Voltage (V_CBO) 120 V
Emitter-Base Voltage (V_EBO) 5 V
Collector Current (I_C) 0.8 A (Max)
Power Dissipation (P_T) 1 W (Case Limited)
DC Current Gain (h_FE) 40 to 300 (Varies by test conditions)
Transition Frequency (f_T) 100 MHz (Typ)
Operating Temperature Range -65??C to +200??C

JANTXV2N3418-Transistor Key Features

  • High Voltage Capability: Supports collector-emitter voltages up to 100 V, enabling its use in high-voltage switching circuits.
  • Wide Operating Temperature Range: Reliable operation from -65??C to +200??C, critical for military and aerospace applications requiring consistent performance in extreme environments.
  • Robust Current Handling: Can manage collector currents up to 0.8 A, suitable for moderate power amplification and switching tasks.
  • Enhanced Gain Characteristics: Offers a broad DC current gain range (40?C300), allowing flexible application in amplification stages with adaptable performance.
  • Military-Grade Qualification: Built to JAN specifications, ensuring high reliability and durability under mechanical and thermal stress.
  • Fast Transition Frequency: Operates typically at 100 MHz, suitable for high-frequency analog and switching circuits.
  • Compact TO-18 Metal Can Package: Provides superior thermal dissipation and mechanical protection, aiding long-term circuit stability.

Typical Applications

  • Used extensively in defense and aerospace systems for high-reliability amplification and switching due to its rugged construction and military-grade qualification.
  • Ideal for low to medium power linear amplifiers where stable gain and high voltage tolerance are critical.
  • Suitable for signal processing circuits requiring fast switching and high frequency response in harsh environments.
  • Commonly employed in industrial control systems where temperature extremes and electrical stresses demand durable transistor performance.

JANTXV2N3418-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and temperature ratings compared to many commercial-grade alternatives, enhancing reliability in critical applications. Its military-standard qualification ensures consistent performance under extreme conditions, providing sourcing specialists and engineers with confidence in long-term operational stability. The wide gain range and fast transition frequency further distinguish it for precision analog and switching tasks where sensitivity and response speed are essential.

JANTXV2N3418-Transistor Brand Info

The JANTXV2N3418 belongs to a family of transistors originally produced under the JAN (Joint Army-Navy) specification, reflecting a collaboration between military branches to standardize high-reliability semiconductors. This device is typically manufactured by established semiconductor firms specializing in defense-grade components. The JAN prefix indicates rigorous testing and qualification, including temperature cycling, mechanical shock, and electrical stress assessments. Industrial and aerospace customers select this transistor for its proven track record and adherence to stringent quality control processes, ensuring dependable operation in mission-critical electronics.

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