JANTXV2N3418S-Transistor NPN High-Speed Switching Transistor in TO-18 Package

JANTXV2N3418S-Transistor Overview

The JANTXV2N3418S transistor is a high-reliability silicon NPN bipolar junction transistor designed for military and aerospace applications requiring robust performance under demanding conditions. This transistor offers a collector-emitter voltage rating of 100V and a collector current capacity of 0.8A, making it suitable for switching and amplification tasks in high-reliability environments. With a transition frequency of 100 MHz, it supports moderate high-frequency operation. Packaged in a TO-18 hermetic metal can, it ensures excellent thermal performance and environmental protection. This component is sourced from IC Manufacturer and complies with JAN (Joint Army-Navy) standards for enhanced quality and durability.

JANTXV2N3418S-Transistor Technical Specifications

JANTXV2N3418S-Transistor Key Features

• High Voltage Capability: Supports up to 100 V collector-emitter voltage, enabling use in medium power switching and amplification circuits.
• Moderate Current Handling: 0.8 A collector current allows it to drive loads efficiently without significant thermal management requirements.
• Hermetic Packaging: The TO-18 metal can package provides superior environmental protection and thermal conduction, critical for aerospace and military applications.
• Reliable Gain Bandwidth: 100 MHz transition frequency offers stable operation in moderate frequency analog and switching circuits.

Typical Applications

• Used extensively in military and aerospace systems where rugged transistor performance is critical under temperature extremes and radiation exposure.
• Suitable for low to medium power amplification in communication and control circuits requiring high reliability.
• Ideal for switching applications in avionics and defense electronics where device longevity and performance stability are mandatory.
• Applicable in precision measurement and instrumentation modules requiring consistent gain and low noise operation.

JANTXV2N3418S-Transistor Advantages vs Typical Alternatives

This transistor stands out with its adherence to JAN military standards, ensuring enhanced reliability, performance consistency, and environmental resilience compared to common commercial-grade alternatives. Its hermetic TO-18 metal can packaging offers superior thermal dissipation and protection against moisture and contaminants. The balanced voltage and current ratings provide flexibility for various demanding applications while maintaining stable gain and frequency response, making it an excellent choice for engineers prioritizing durability and precision in harsh environments.

JANTXV2N3418S-Transistor Brand Info

The JANTXV2N3418S is manufactured under stringent Joint Army-Navy (JAN) specifications, a hallmark of high-reliability semiconductor components tailored for military and aerospace use. This designation typically corresponds to devices produced by trusted suppliers in the semiconductor industry specializing in rugged transistor technologies. The JAN standard ensures rigorous testing for electrical performance, thermal endurance, and environmental stress, making this transistor a dependable solution for critical system designs requiring guaranteed long-term operation and quality traceability.

FAQ

What is the maximum collector current for the JANTXV2N3418S transistor?

The maximum collector current for this transistor is 0.8 A (800 milliamps). This current rating allows it to handle moderate load conditions suitable for amplification and switching tasks in various industrial and military applications.

Can this transistor operate in high-temperature environments?

Yes, the device is rated to operate reliably within a temperature range of -55??C to +125??C, making it suitable for environments with wide thermal variations such