R2N2907A-Transistor Overview
The R2N2907A-Transistor is a high-performance PNP bipolar junction transistor designed for general-purpose amplification and switching applications. It offers reliable operation with a collector current rating suitable for medium power stages and moderate voltage environments. With a complementary NPN counterpart, this transistor is widely used in analog circuits, signal processing, and driver stages. Its robust electrical characteristics ensure stability in industrial and consumer electronics. This device is manufactured following stringent quality standards, making it a dependable choice for engineers and sourcing specialists seeking consistent performance in semiconductor components. For detailed sourcing and technical consultation, visit IC Manufacturer.
R2N2907A-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP Bipolar Junction | |
| Collector-Emitter Voltage (Vceo) | 60 | V |
| Collector-Base Voltage (Vcbo) | 60 | V |
| Emitter-Base Voltage (Vebo) | 5 | V |
| Collector Current (Ic) | 600 | mA |
| Power Dissipation (Pc) | 400 | mW |
| DC Current Gain (hFE) | 100 – 300 | |
| Transition Frequency (fT) | 100 | MHz |
| Package Type | TO-18 Metal Can |
R2N2907A-Transistor Key Features
- High current gain: Provides efficient signal amplification, enabling lower input power requirements and improved circuit sensitivity.
- Moderate voltage capability: Supports up to 60V collector-emitter voltage, suitable for a wide range of low to medium voltage applications.
- Compact TO-18 package: Offers excellent thermal dissipation and mechanical durability, ensuring reliable operation in demanding environments.
- Wide frequency response: Transition frequency up to 100 MHz allows use in high-speed switching and amplifier circuits.
Typical Applications
- Signal amplification in audio and low-frequency analog circuits, where reliable gain and distortion control are critical for performance.
- Switching elements in relay drivers and motor control circuits, providing robust operation under moderate load conditions.
- Complementary transistor pairs in push-pull amplifier configurations for efficient power handling and linearity.
- General-purpose switching in industrial control systems, enabling precise and dependable circuit responses.
R2N2907A-Transistor Advantages vs Typical Alternatives
This transistor stands out with its balanced combination of voltage tolerance and current gain, making it highly versatile compared to typical low-power PNP devices. Its metal TO-18 package enhances thermal management and mechanical stability, improving reliability in industrial applications. The wide frequency response and moderate power dissipation allow integration into both switching and amplification roles more efficiently than many alternatives, reducing the need for additional components and simplifying circuit design.
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R2N2907A-Transistor Brand Info
The R2N2907A is a standardized transistor type originally popularized by manufacturers such as Fairchild Semiconductor and Texas Instruments under the 2N2907A designation. It is widely produced and supplied by multiple semiconductor manufacturers globally, ensuring broad availability. The device adheres to JEDEC standards for bipolar junction transistors, ensuring interchangeability and consistent electrical performance. This transistor is recognized for its reliability and robust construction, making it a trusted component in both legacy and modern electronic designs.
FAQ
What is the maximum collector current rating of this PNP transistor?
The maximum collector current for this transistor is 600 milliamps (mA). This rating defines the highest continuous current the device can safely handle without risk of damage, making it suitable for medium-power switching and amplification tasks.
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Which package type does this transistor use, and why is it important?
This transistor is housed in a TO-18 metal can package. The metal enclosure provides superior heat dissipation and mechanical protection compared to plastic packages, which enhances the transistor’s reliability and longevity in industrial environments.
