JANTX2N3419-Transistor – NPN Power Transistor in TO-66 Metal Can Package by ON Semiconductor

  • This transistor enables efficient switching and amplification, improving circuit performance and control precision.
  • It features a high voltage rating, ensuring stable operation under demanding electrical conditions.
  • The compact package design allows for board-space savings, facilitating integration into dense electronic assemblies.
  • Ideal for power regulation in industrial equipment, it helps maintain consistent output and system stability.
  • Manufactured to meet strict quality standards, it offers dependable long-term reliability in various environments.
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JANTX2N3419-Transistor Overview

The JANTX2N3419 is a high-performance NPN bipolar junction transistor designed for reliable operation in demanding industrial and military applications. Featuring a maximum collector-emitter voltage of 100V and a collector current rating of up to 1A, this transistor offers robust switching and amplification capabilities. Its construction ensures stable performance under elevated temperatures with a junction temperature rating up to 200??C. The device is widely used for general-purpose amplification and switching tasks where durability and precise control are essential. Sourced from a trusted IC Manufacturer, this transistor meets rigorous quality standards for use in critical electronic systems.

JANTX2N3419-Transistor Technical Specifications

Parameter Value
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1 A continuous
Power Dissipation (Ptot) 20 W
Transition Frequency (fT) 100 MHz
Junction Temperature (TJ) 200??C max

JANTX2N3419-Transistor Key Features

  • High voltage handling: Supports up to 100V collector-emitter voltage, enabling use in medium power switching circuits with high reliability.
  • Robust current rating: 1A continuous collector current allows efficient control of moderate power loads without thermal stress.
  • High transition frequency: Operating at 100 MHz, it ensures fast switching speeds suitable for RF amplification and high-frequency applications.
  • Wide junction temperature range: Rated for operation up to 200??C, this transistor maintains performance in harsh thermal environments.

Typical Applications

  • Switching and amplification in industrial control systems requiring reliable performance under harsh electrical conditions.
  • Audio amplification circuits where medium power gain and linearity are essential.
  • General-purpose transistor applications in military-grade and aerospace electronic systems due to its rugged construction.
  • High-frequency amplification and signal processing in communications equipment operating up to 100 MHz frequencies.

JANTX2N3419-Transistor Advantages vs Typical Alternatives

Compared to standard transistors, this device offers superior voltage and temperature ratings, ensuring enhanced reliability and longevity in demanding applications. Its higher power dissipation and current handling allow for efficient operation without excessive heat buildup, reducing system cooling requirements. The fast transition frequency supports high-speed switching and RF tasks, making it a versatile choice over typical low-frequency transistors. These advantages translate into better integration and durability in industrial and military electronics.

JANTX2N3419-Transistor Brand Info

The JANTX2N3419 is a military-grade variant of the popular 2N3419 transistor, produced by established semiconductor manufacturers specializing in high-reliability components. Known for strict adherence to MIL-SPEC standards, this transistor is built to withstand rigorous environmental and electrical stresses. It is often sourced from suppliers with a strong reputation for quality control, traceability, and long-term availability. This makes it a trusted choice for engineers designing mission-critical systems in aerospace, defense, and industrial sectors.

FAQ

What is the maximum operating voltage for this transistor?

The maximum collector-emitter voltage rating is 100 volts, allowing it to handle medium power switching applications safely without risk of breakdown under normal operating conditions.

Can this transistor be used in high-frequency applications?

Yes, it features a transition frequency of 100 MHz, enabling effective use in RF amplification and other high-frequency circuits that require fast transistor switching.

What are the thermal limits when using this device?

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