2N1613L-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by ON Semiconductor

2N1613L-Transistor Overview

The 2N1613L is a bipolar junction transistor (BJT) designed for switching and amplification applications in low to medium power electronic circuits. Featuring a silicon NPN structure, it offers reliable performance with typical collector current and voltage ratings suited for general-purpose use. This transistor is commonly utilized in signal amplification stages, driver circuits, and switching tasks where moderate gain and power handling are required. Its robust electrical characteristics ensure consistent operation across various industrial environments. For detailed sourcing and technical support, visit IC Manufacturer.

2N1613L-Transistor Technical Specifications

2N1613L-Transistor Key Features

• Moderate power handling: Supports collector currents up to 0.8 A, allowing use in a variety of switching and amplification circuits without excessive thermal management.
• Wide voltage ratings: Collector-emitter voltage of 30 V and collector-base voltage of 40 V provide versatility for medium-voltage applications.
• High current gain range: DC current gain between 30 and 150 ensures amplification efficiency, enabling signal strengthening with good linearity.
• Frequency response: Transition frequency of 50 MHz makes it suitable for moderate-speed switching and RF applications.
• Robust TO-18 package: Metal can housing improves thermal dissipation and mechanical durability for industrial environments.

Typical Applications

• Signal amplification in audio and intermediate frequency stages, where moderate gain and linearity are essential for sound and data fidelity.
• Switching elements in power supply regulation circuits, enabling efficient control of power flow with reliable response times.
• Driver transistors in relay and motor control circuits, providing the current gain necessary to activate larger loads safely.
• General purpose transistor use in industrial control systems, where a balance of voltage, current, and gain meets diverse circuit demands.

2N1613L-Transistor Advantages vs Typical Alternatives

Compared to typical small-signal transistors, this device offers enhanced power dissipation and a higher collector current rating, enabling it to handle more demanding loads without compromising reliability. Its broad current gain range supports flexible circuit design, while the TO-18 metal can package ensures superior thermal performance and mechanical robustness. These attributes collectively improve system stability and longevity, making it a smart choice over more fragile or lower-rated alternatives.

2N1613L-Transistor Brand Info

The 2N1613L transistor is a legacy semiconductor device originally popularized by manufacturers such as Motorola and ON Semiconductor. It remains widely available through distributors specializing in discrete components for industrial and electronic design applications. Known for its dependable performance in low-to-medium power switching and amplification tasks, it has been a go-to choice for engineers requiring a trusted NPN transistor with moderate voltage and current capabilities. The continued support and documentation from established brands ensure ease of