The JANTX2N3419S is a high-performance silicon NPN bipolar junction transistor (BJT) engineered for demanding military and aerospace applications. Designed to operate reliably under harsh environmental conditions, this transistor features robust electrical characteristics, including a high collector-base voltage and power dissipation capacity. It is optimized for signal amplification and switching tasks, offering consistent gain and low noise levels. The hermetically sealed TO-18 metal can package ensures enhanced durability and long-term stability. Ideal for precision analog circuits, the JANTX2N3419S is a preferred choice for engineers seeking ruggedness and dependable operation in mission-critical systems. Available through IC Manufacturer.
JANTX2N3419S-Transistor Technical Specifications
Parameter
Specification
Type
NPN Bipolar Junction Transistor
Collector-Base Voltage (VCBO)
100 V
Collector-Emitter Voltage (VCEO)
80 V
Emitter-Base Voltage (VEBO)
5 V
Collector Current (IC)
1 A (continuous)
Power Dissipation (PC)
625 mW (at 25??C)
DC Current Gain (hFE)
50 to 300 (depending on collector current)
Transition Frequency (fT)
100 MHz (typical)
Package Type
Hermetically sealed TO-18 metal can
JANTX2N3419S-Transistor Key Features
High voltage ratings: Supports up to 100 V collector-base voltage, enabling use in circuits requiring robust voltage tolerance.
Reliable current capacity: Handles continuous collector currents up to 1 A, suitable for moderate power amplification and switching.
Wide DC current gain range: Offers hFE values from 50 to 300, allowing flexible gain control for precise analog applications.
Hermetic TO-18 packaging: Ensures enhanced environmental protection and long-term stability in harsh conditions.
High transition frequency: 100 MHz typical fT supports high-speed switching and RF amplification tasks.
Low noise characteristics: Optimized for signal integrity in sensitive analog and communication circuits.
Military-grade quality: Built and tested to meet stringent MIL-STD requirements for reliability and performance.
Typical Applications
Signal amplification in aerospace and defense electronic systems requiring stable gain and environmental resilience.
High-frequency switching circuits where consistent performance at elevated frequencies is critical.
Analog signal processing in communication equipment exposed to extreme temperature and mechanical stress.
Power amplification stages in instrumentation and control systems demanding reliable operation over long service life.
JANTX2N3419S-Transistor Advantages vs Typical Alternatives
This transistor stands out with its high voltage and current ratings combined with a hermetically sealed metal package, offering superior reliability compared to plastic-encapsulated alternatives. Its broad gain range and low noise operation provide accuracy and sensitivity crucial for military and aerospace electronics. The robust design ensures consistent performance under thermal and mechanical stress, reducing failure rates and maintenance costs in critical industrial applications.
The JANTX2N3419S is part of the JANTX series, originally specified to meet military standards for transistor performance and reliability. Commonly manufactured under strict quality controls by leading semiconductor producers specializing in defense-grade components, this transistor is recognized for its rugged construction and consistent electrical characteristics. Its TO-18 hermetic metal can package is a hallmark of devices designed for harsh environments, ensuring long-term operational stability. The JANTX2N3419S remains a trusted component in aerospace, defense, and industrial electronics markets worldwide.
FAQ
What is the maximum collector current rating for the J
