JANTXV2N3507-Transistor NPN Power Transistor in TO-220 Package by ON Semiconductor

JANTXV2N3507-Transistor Overview

The JANTXV2N3507 is a high-voltage bipolar junction transistor (BJT) designed for robust switching and amplification in demanding industrial and military-grade applications. This transistor features a high collector-emitter voltage rating and reliable gain characteristics, ensuring stable operation under elevated stress conditions. Suitable for use in power regulation, signal processing, and amplifier circuits, it provides exceptional performance where durability and precision are paramount. Its hermetic TO-39 metal can package enhances thermal dissipation and mechanical resilience. Engineers and sourcing specialists can rely on this device for enhanced reliability and consistent performance in critical electronic systems. For detailed specifications and procurement, visit IC Manufacturer.

JANTXV2N3507-Transistor Technical Specifications

JANTXV2N3507-Transistor Key Features

• High voltage capability: Supports collector-emitter voltages up to 60 V, enabling use in demanding power circuits.
• Robust current handling: Continuous collector current rating of 2 A allows for reliable switching in medium-power applications.
• Stable gain performance: Minimum DC current gain of 40 ensures consistent amplification over a wide operating range.
• Hermetic packaging: The TO-39 metal can offers excellent thermal conductivity and environmental protection, enhancing device longevity.
• Military-grade reliability: Designed to meet stringent quality and durability standards for critical industrial applications.

Typical Applications

• Power amplifier stages in industrial control systems where stable gain and high voltage tolerance are essential for signal integrity.
• Switching regulators requiring reliable operation at moderate power levels and thermal dissipation.
• Signal conditioning circuits in instrumentation where precision and noise immunity are critical.
• Military and aerospace electronics needing rugged, long-life transistors with proven environmental resilience.

JANTXV2N3507-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage tolerance, current handling, and gain stability that outperforms many standard BJTs in similar packages. Its hermetic TO-39 metal can ensures superior thermal management and environmental protection compared to plastic-encapsulated devices. The device??s military-grade qualification ensures enhanced reliability and longevity, making it well-suited for mission-critical applications where typical commercial transistors may fail prematurely.

JANTXV2N3507-Transistor Brand Info

The JANTXV2N3507 is a transistor manufactured under the JAN (Joint Army-Navy) standard, indicating its compliance with military specifications for performance and reliability. This device is produced by established semiconductor manufacturers specializing in rugged discrete components for industrial and defense markets. The JAN prefix denotes stringent testing and quality assurance processes, ensuring suitability for harsh environments. The transistor??s construction and testing conform to MIL-STD-750 test methods, making it a trusted choice for engineers requiring dependable components in critical applications.

FAQ

What is the maximum voltage rating for the JANTXV2N3507 transistor?

The transistor supports a maximum collector-emitter voltage (V_CEO) of 60 volts and a collector-base voltage (V_CBO) of 100 volts, allowing it to operate safely in moderately high-voltage circuits without risk of breakdown.

Can this transistor handle continuous high current loads?