JAN2N3499-Transistor NPN Power Amplifier Transistor in TO-3 Package by ON Semiconductor

JAN2N3499-Transistor Overview

The JAN2N3499 is a high-voltage NPN bipolar junction transistor specifically designed for medium-power switching and amplification applications. With a collector-emitter voltage rating of 300V and a collector current capacity of up to 10A, this device is ideal for industrial and commercial circuits requiring robust performance under elevated voltages and currents. The transistor exhibits a DC current gain (hFE) ranging from 20 to 70, enabling efficient signal amplification while maintaining thermal stability. Its rugged construction ensures reliable operation in demanding environments. Engineers and sourcing specialists will find this transistor suitable for power switching, motor control, and audio frequency amplification tasks. Available through IC Manufacturer, it balances performance and durability for critical electronic designs.

JAN2N3499-Transistor Technical Specifications

JAN2N3499-Transistor Key Features

• High voltage capability: Supports collector-emitter voltages up to 300V, enabling operation in high-voltage industrial circuits with safety margin.
• High continuous collector current: Rated for 10A continuous current, ensuring the transistor can handle significant power loads without thermal degradation.
• Robust power dissipation: With a maximum power dissipation of 115W, it offers reliable thermal management in power amplifier and switching applications.
• Wide DC current gain range: Gain between 20 and 70 allows flexibility in circuit design for amplification and switching performance.
• Durable TO-3 package: Provides excellent heat dissipation and mechanical stability, facilitating integration in industrial power modules.
• Low-frequency transition frequency: Suitable for audio frequency amplification and general-purpose switching where high-speed operation is not critical.

Typical Applications

• Power switching in industrial motor control systems, where high voltage and current handling are essential for reliable operation.
• Audio frequency power amplifiers, leveraging its gain and power dissipation capacity to drive moderate power speakers.
• General-purpose linear amplification in analog circuits requiring medium power and voltage ratings.
• Voltage regulation and power supply circuits in industrial electronics, utilizing its robustness and thermal reliability.

JAN2N3499-Transistor Advantages vs Typical Alternatives

This transistor offers superior high-voltage and high-current handling compared to standard small-signal transistors, making it well-suited for industrial power applications. Its robust TO-3 metal package enhances thermal dissipation and mechanical durability, which contributes to longer device life and reliability under heavy loads. The flexible DC gain range allows for adaptable circuit design, while the high power dissipation rating supports demanding switching and amplification tasks, positioning it favorably against typical alternatives in similar voltage and current classes.

JAN2N3499-Transistor Brand Info

The JAN prefix indicates that this transistor was originally manufactured to meet military specifications, ensuring stringent quality and reliability standards. The 2N3499 is a well-established semiconductor device historically produced by multiple manufacturers specializing in power transistors, including companies such as Motorola and ON Semiconductor. These manufacturers ensure the device meets reliable performance criteria for demanding industrial and defense applications. The metal TO-3 package design reflects a legacy of durable, high-performance transistors used in power amplification, switching, and control circuits.

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