JANTXV2N2222AP-Transistor-PIND – NPN Switching Transistor in PIND Package by ON Semiconductor

  • This transistor amplifies and switches electronic signals, enabling efficient control in circuits.
  • Its maximum voltage rating ensures safe operation within designed electrical limits, preventing damage.
  • The compact PIND package reduces board space, supporting dense circuit layouts and easier assembly.
  • Ideal for signal processing in communication devices, it improves performance by handling moderate current loads reliably.
  • Manufactured under controlled conditions, the component meets standard reliability requirements for consistent operation.
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JANTXV2N2222AP-Transistor-PIND Overview

The JANTXV2N2222AP is a high-reliability PIND transistor designed for precision switching and amplification in industrial and defense-grade electronics. Built to meet stringent military standards, it ensures stable operation under extreme environmental conditions, including temperature and vibration. This transistor supports efficient signal control with robust gain characteristics and low noise, making it ideal for use in rugged applications where durability and performance are critical. Sourcing specialists and engineers can rely on this device for dependable, long-term operation. For more detailed technical data, visit IC Manufacturer.

JANTXV2N2222AP-Transistor-PIND Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (Vce) 40 V
Collector Current (Ic) 800 mA (max)
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 100 to 300 (typical at Ic=150 mA)
Transition Frequency (fT) 300 MHz (typical)
Operating Temperature Range -55??C to +125??C
Package Type TO-18 Metal Can
Breakdown Voltage (Vebo) 6 V (Emitter-Base)

JANTXV2N2222AP-Transistor-PIND Key Features

  • Military-Grade Reliability: Manufactured to JAN (Joint Army-Navy) specifications, providing enhanced reliability and performance for critical defense and aerospace applications.
  • High Gain and Frequency Response: Offers a typical DC current gain of up to 300 and transition frequency around 300 MHz, enabling efficient amplification and fast switching.
  • Robust Thermal Performance: Operates reliably over a wide temperature range from -55??C to +125??C, ensuring stable functionality in harsh environments.
  • Compact TO-18 Metal Can Packaging: Provides excellent mechanical protection and low thermal resistance for improved heat dissipation in compact circuits.

Typical Applications

  • Signal amplification and switching in military communication and radar systems requiring high reliability and noise immunity.
  • Industrial control circuits where robust transistor operation is needed under varying temperature and mechanical stress conditions.
  • Precision analog circuits in aerospace instrumentation for stable gain and frequency response.
  • General-purpose switching in ruggedized electronic assemblies used in harsh environments.

JANTXV2N2222AP-Transistor-PIND Advantages vs Typical Alternatives

This transistor excels over typical commercial-grade devices by adhering to stringent military standards, offering superior reliability, extended temperature range, and robust mechanical packaging. Its high gain and frequency response provide efficient amplification with low noise, while the metal TO-18 package ensures excellent thermal management. These features make it a preferred choice for engineers seeking durable, high-performance transistors for demanding industrial and defense applications.

JANTXV2N2222AP-Transistor-PIND Brand Info

The JANTXV2N2222AP is produced under the JANTX series, which is a family of transistors meeting the Joint Army-Navy (JAN) military standards. These devices are often manufactured by well-established semiconductor companies specializing in defense and aerospace components. The JANTX designation guarantees rigorous testing and qualification processes, ensuring high reliability and consistent performance in mission-critical applications. The transistor’s design and packaging reflect decades of industry expertise in producing components that withstand extreme conditions without performance degradation.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for the device is 800 milliamperes (mA). Operating within this current limit ensures the transistor functions reliably without thermal or electrical overstress.

Can the transistor operate in high-temperature environments?

Yes, it is specified to operate over a wide temperature range from -55??C up to +125??C, making it suitable for harsh environments such as aerospace and military systems.

What type of package does the transistor come in, and why is it important?

This transistor uses a TO-18 metal can package, which provides excellent mechanical protection and improved heat dissipation

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