2N3507A-Transistor PNP Amplifier Transistor in TO-18 Metal Can Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling control of current flow in various circuits.
  • Its voltage rating supports stable operation, ensuring consistent performance under normal conditions.
  • The compact package reduces board space, allowing for efficient layout in tight electronic designs.
  • Ideal for switching applications, it helps manage power delivery effectively in electronic devices.
  • Manufactured with quality standards to provide reliable operation and long-term durability in circuits.
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2N3507A-Transistor Overview

The 2N3507A is a PNP bipolar junction transistor designed for medium power amplification and switching applications. Featuring a maximum collector current of 1A and a collector-emitter voltage rating of 60V, this transistor suits a variety of industrial and consumer electronic circuits requiring reliable performance. Its robust construction ensures dependable operation under moderate power dissipation, making it an ideal choice for amplifiers, drivers, and general-purpose switching. The device??s complementary characteristics enable effective integration into analog and digital designs. For sourcing and detailed technical support, visit the IC Manufacturer portal.

2N3507A-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1 A
Power Dissipation (Ptot) 30 W
DC Current Gain (hFE) 40?C100 (typical)
Transition Frequency (fT) 3 MHz
Junction Temperature (TJ) +150 ??C

2N3507A-Transistor Key Features

  • Medium power capability: Supports collector currents up to 1A, enabling effective amplification and switching in moderate power circuits.
  • High voltage tolerance: With collector-emitter and collector-base voltages rated at 60V, it suits applications requiring reliable high voltage operation.
  • Wide gain range: DC current gain between 40 and 100 allows flexible biasing and circuit design for varying amplification needs.
  • Thermal endurance: Maximum junction temperature up to +150??C ensures stable operation in harsh thermal environments.

Typical Applications

  • Audio power amplifiers: The transistor??s medium power and gain characteristics make it suitable for use in low to medium power audio amplification stages.
  • Switching devices: Ideal for general-purpose switching in industrial control circuits and consumer electronics.
  • Driver stages: Acts effectively as a driver transistor for relays, solenoids, and other medium current loads.
  • Signal amplification: Used in analog circuits requiring reliable signal boosting with moderate frequency response.

2N3507A-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage rating, current capacity, and gain, making it a competitive choice versus typical small-signal transistors. Its higher power dissipation rating and thermal tolerance improve reliability in demanding applications. Compared to other PNP transistors, it provides stable amplification and switching performance with a typical transition frequency of 3 MHz, suitable for many industrial and consumer circuits. These attributes result in better integration and durable operation under varied environmental conditions.

2N3507A-Transistor Brand Info

The 2N3507A transistor is widely manufactured by multiple semiconductor suppliers, including reputable brands known for high-quality discrete components. Originally standardized in the JEDEC register, this transistor is commonly found in the product portfolios of manufacturers such as ON Semiconductor, Vishay, and Fairchild Semiconductor. These brands ensure compliance with industry standards for reliability and performance, offering robust supply chain support and detailed datasheets. Customers sourcing this transistor benefit from consistent quality and extensive technical documentation to support design and production processes.

FAQ

What is the maximum collector current for the 2N3507A transistor?

The maximum collector current for

Application

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