JANTX2N2222AP-Transistor-PIND Overview
The JANTX2N2222AP-Transistor-PIND is a military-grade NPN bipolar junction transistor designed for high-reliability switching and amplification applications. It offers robust performance under stringent environmental conditions, making it ideal for aerospace, defense, and industrial electronics where durability and precision are critical. This transistor provides dependable gain characteristics and low noise, ensuring signal integrity in sensitive circuits. Manufactured to meet rigorous military standards, it supports stable operation across a wide temperature range. For engineers and sourcing specialists seeking a proven transistor solution, the JANTX2N2222AP combines quality and durability, backed by IC Manufacturer expertise.
JANTX2N2222AP-Transistor-PIND Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 40 V |
| Collector Current (IC) | 800 mA |
| Gain Bandwidth Product (fT) | 300 MHz (typical) |
| DC Current Gain (hFE) | 100 to 300 (varies by test conditions) |
| Power Dissipation (PD) | 625 mW |
| Junction Temperature Range | -65??C to +200??C |
| Package Type | TO-18 Metal Can |
JANTX2N2222AP-Transistor-PIND Key Features
- Military-Grade Reliability: Ensures consistent performance in harsh environments, critical for aerospace and defense applications.
- High Gain and Frequency Response: Supports efficient signal amplification and switching at frequencies up to 300 MHz, vital for communications circuits.
- Wide Operating Temperature Range: Maintains operational stability from -65??C to +200??C, suitable for extreme industrial conditions.
- Robust Metal Can Packaging: Provides superior protection against mechanical and thermal stresses compared to plastic packages.
Typical Applications
- Switching and amplification in military communication systems requiring high reliability and stable gain characteristics over temperature extremes.
- Signal processing circuits in aerospace instrumentation where low noise and ruggedness are essential.
- Industrial control systems exposed to harsh environments demanding durable transistor solutions.
- General-purpose amplification and switching in defense electronics with stringent quality and performance standards.
JANTX2N2222AP-Transistor-PIND Advantages vs Typical Alternatives
This transistor offers superior environmental resilience and reliability compared to standard commercial equivalents. Its military-grade construction and rigorous testing ensure stable operation under extreme temperatures and mechanical stress. Additionally, the metal can package enhances thermal dissipation and mechanical protection, making it a preferred choice for engineers prioritizing long-term durability and consistent performance in mission-critical applications.
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JANTX2N2222AP-Transistor-PIND Brand Info
The JANTX2N2222AP is a product conforming to JEDEC standards and typically supplied by manufacturers specializing in military and aerospace-grade components. The “JAN” prefix denotes compliance with Joint Army-Navy specifications, indicating this transistor meets strict quality, reliability, and traceability requirements. This device is manufactured under controlled processes ensuring high reliability, making it a trusted component for demanding industrial and defense applications.
FAQ
What is the maximum collector current for this transistor?
The maximum collector current for this transistor is 800 mA. This current rating allows it to handle moderate power loads, making it suitable for switching and amplification tasks in a variety of circuits.
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What temperature range can the transistor operate within?
This device supports a wide junction temperature range from -65??C to +200??C, allowing reliable operation in extreme temperature environments typically encountered in aerospace and military applications.
What type of package does this transistor use, and why is it important?
The transistor is housed in a TO






