JANTXV2N5415S-Transistor NPN Power Transistor in TO-39 Metal Can Package ?C JANTXV2N5415S

JANTXV2N5415S-Transistor Overview

The JANTXV2N5415S transistor is a high-reliability silicon NPN bipolar junction transistor designed for general-purpose amplification and switching applications. With a collector-emitter voltage rating of 80V and a collector current capacity of up to 10A, it provides robust performance in demanding industrial environments. Its JANTXV military-grade qualification ensures enhanced durability and consistency under harsh operating conditions. Suitable for power amplification and driver stages, this transistor supports efficient thermal management with a maximum junction temperature of 200??C. Engineers and sourcing specialists will find this device an excellent solution for applications requiring dependable high-power switching and amplification. For more detailed semiconductor components, visit IC Manufacturer.

JANTXV2N5415S-Transistor Technical Specifications

JANTXV2N5415S-Transistor Key Features

• High collector current capacity: Supports up to 10A continuous current, enabling robust power switching and amplification in industrial circuits.
• Military-grade reliability: JANTXV qualification ensures consistent performance under extreme temperature and environmental conditions, critical for aerospace and defense applications.
• High power dissipation: With a maximum power rating of 115W, it handles demanding thermal loads, reducing the risk of device failure during continuous operation.
• Low frequency operation: Transition frequency of 3 MHz makes it suitable for audio frequency and low-frequency power amplification tasks.

Typical Applications

• Power amplifier stages in industrial and military communication equipment requiring stable, high-current gain at moderate frequencies.
• Switching applications in power control circuits where reliable on/off performance and high voltage ratings are necessary.
• Driver stages for relays and solenoids in automated industrial systems, benefiting from high current capacity and rugged packaging.
• Audio frequency amplifiers in rugged environments, leveraging the transistor??s capability to sustain high power dissipation and operate at elevated temperatures.

JANTXV2N5415S-Transistor Advantages vs Typical Alternatives

Compared to typical commercial transistors, this device offers superior robustness and reliability due to its JANTXV military-grade certification. Its high collector current and power dissipation ratings enable it to handle heavier loads and harsher conditions with enhanced thermal stability. The TO-3 metal can package provides excellent heat dissipation and mechanical strength, making it a preferred choice for demanding industrial and defense applications where longevity and consistent performance are critical.

JANTXV2N5415S-Transistor Brand Info

The JANTXV2N5415S transistor is a military-grade version of the widely used 2N5415 transistor, originally produced and standardized by various semiconductor manufacturers under stringent military standards. The JANTXV (Joint Army-Navy Technical Exchange Validation) designation signifies compliance with MIL-STD-750 tests, ensuring the device meets rigorous quality, reliability, and performance requirements. This transistor is typically sourced from manufacturers specializing in high-reliability components for aerospace, defense, and industrial sectors. Its legacy and proven track record make it a dependable choice for engineers designing high-reliability systems.

FAQ

What does the JANTXV qualification mean for this transistor?

The JANTXV qualification indicates that the transistor has passed extensive military-standard testing, including burn-in, high-temperature operating life, and environmental stress tests. This ensures higher reliability and consistent performance in harsh conditions compared to commercial-grade parts.

Can this transistor be used for high-frequency applications?

This transistor is optimized for low to moderate frequency applications with a transition frequency around 3 MHz. It is not suitable for high-frequency RF circuits but