JAN2N3440-Transistor NPN Power Amplifier Transistor in TO-126 Package by ON Semiconductor

JAN2N3440-Transistor Overview

The JAN2N3440 is a high-power NPN bipolar junction transistor (BJT) designed for demanding switching and amplification applications. It features robust voltage and current handling capabilities, making it suitable for industrial and military-grade electronics. With a maximum collector-emitter voltage of 100V and collector current up to 10A, the device ensures reliable performance in high-stress environments. Its low saturation voltage contributes to efficient switching, minimizing power loss. The transistor is housed in a TO-3 metal can package, providing excellent thermal dissipation. Engineers and sourcing specialists seeking a rugged, high-performance transistor can rely on this product from IC Manufacturer for critical applications requiring durability and precision.

JAN2N3440-Transistor Technical Specifications

JAN2N3440-Transistor Key Features

• High voltage and current rating: Supports up to 100V collector-emitter voltage and 10A collector current, enabling use in high-power circuits.
• Robust TO-3 metal can package: Provides excellent thermal conductivity for efficient heat dissipation and enhanced reliability in harsh conditions.
• Wide DC current gain range: Offers flexibility in circuit design with a gain between 20 and 70, suitable for amplification and switching roles.
• Low saturation voltage: Minimizes power loss during switching, improving overall circuit efficiency.

Typical Applications

• Power amplification in audio and industrial control circuits requiring high current and voltage handling capabilities.
• Switching applications in power supplies and motor control systems where reliable transistor operation under load is critical.
• High-reliability military and aerospace electronics needing components with stringent quality standards and rugged packaging.
• General-purpose transistor use in medium to high power linear and switching amplifiers.

JAN2N3440-Transistor Advantages vs Typical Alternatives

This transistor provides superior power handling and thermal performance compared to typical small-signal BJTs. Its TO-3 metal package ensures better heat dissipation, enhancing reliability under high load. The combination of high voltage rating and wide current gain range allows engineers to optimize circuits for efficiency and precision. These advantages make it more suitable for demanding industrial and military applications than standard plastic-encapsulated alternatives.

JAN2N3440-Transistor Brand Info

The JAN2N3440 transistor is a military-grade device originally manufactured under the Joint Army-Navy (JAN) standard, ensuring a high level of quality and reliability. It is typically offered by legacy semiconductor manufacturers with a long history in defense and industrial electronics. The TO-3 package and rigorous testing protocols make this transistor a trusted choice for critical applications where performance and durability are paramount.

FAQ

What is the maximum collector current for the JAN2N3440 transistor?

The maximum collector current for this transistor is rated at 10 amperes, allowing it to handle substantial current loads in power amplification and switching circuits without compromising performance.

Can the transistor operate at high voltages?

Yes, the device supports up to 100 volts between collector and emitter, making it suitable for high-voltage applications in industrial and military environments.

What package type does the JAN2N3440 use, and why is it important?

The transistor is housed in