JAN2N3507-Transistor Overview
The JAN2N3507 is a high-voltage PNP bipolar junction transistor designed for general-purpose amplification and switching applications. It is built to meet military-grade standards, ensuring robust performance in demanding environments. This transistor offers a collector-emitter voltage rating up to 100V and a collector current capacity of 2A, making it suitable for moderate power applications. Its reliable gain characteristics and switching speed make it an ideal choice for industrial control circuits, power regulation, and audio amplification. Available through IC Manufacturer, this device combines durability with consistent electrical performance for engineers and sourcing specialists seeking dependable components.
JAN2N3507-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP Bipolar Junction | |
| Maximum Collector-Emitter Voltage (Vceo) | 100 | V |
| Maximum Collector-Base Voltage (Vcbo) | 100 | V |
| Maximum Emitter-Base Voltage (Vebo) | 5 | V |
| Collector Current (Ic) | 2 | A |
| Power Dissipation (Pc) | 30 | W |
| DC Current Gain (hFE) | 20 to 70 | |
| Transition Frequency (fT) | 3 | MHz |
| Operating Junction Temperature | -65 to +200 | ??C |
| Package Type | TO-18 Metal Can |
JAN2N3507-Transistor Key Features
- High voltage rating: Supports up to 100V collector-emitter voltage, enabling use in high-voltage switching tasks.
- Robust collector current capability: Handles continuous collector currents up to 2A, suitable for moderate power amplification.
- Wide operating temperature range: Functional from -65??C to +200??C, ensuring reliability in harsh and military-grade environments.
- Military standard quality: Constructed to meet JAN (Joint Army-Navy) specifications, guaranteeing dependable performance under stress.
Typical Applications
- General-purpose amplification in industrial control systems requiring stable gain and voltage handling.
- Switching elements in power supply regulation circuits where high voltage and moderate current are needed.
- Audio frequency amplification in ruggedized equipment or environments demanding military-grade components.
- Signal processing and interface stages in aerospace and defense electronics utilizing JAN specification parts.
JAN2N3507-Transistor Advantages vs Typical Alternatives
This transistor offers enhanced voltage and current ratings compared to standard PNP transistors, making it a reliable choice for demanding industrial and military applications. Its wide operating temperature range and JAN certification ensure superior reliability and longevity, reducing failure rates. Compared to typical commercial alternatives, it provides consistent gain and rugged construction, which are vital for high-accuracy, high-reliability electronic designs.
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JAN2N3507-Transistor Brand Info
The JAN2N3507 is a military-grade transistor initially standardized under the Joint Army-Navy (JAN) designation system, widely recognized for its rigorous quality and reliability benchmarks. It is commonly manufactured by reputable semiconductor companies specializing in high-reliability discrete components for defense and industrial sectors. The device is housed in a TO-18 metal can package, which provides excellent thermal dissipation and mechanical robustness, contributing to its enduring use in harsh environments.
FAQ
What is the maximum voltage the transistor can safely handle?
The device can handle a maximum collector-emitter voltage (Vceo) of 100 volts, allowing it to operate safely in circuits with relatively high voltage demands without
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