JAN2N3507A-Transistor PNP Power Transistor in TO-3 Package ?C NPN Amplifier Component

JAN2N3507A-Transistor Overview

The JAN2N3507A is a high-performance PNP bipolar junction transistor (BJT) designed for general purpose amplification and switching applications in industrial and military-grade electronics. It offers robust current handling capability, reliable gain characteristics, and a durable TO-18 package suitable for demanding environments. This transistor is optimized for low noise and high voltage operation, making it a preferred choice in precision analog circuits and power control systems. Engineers and sourcing specialists can rely on its consistent electrical parameters and rugged construction for long-term stability. Available through IC Manufacturer, the JAN2N3507A supports efficient design integration in both commercial and defense applications.

JAN2N3507A-Transistor Technical Specifications

JAN2N3507A-Transistor Key Features

• High Collector Current Capacity: Supports up to 2 A collector current, enabling robust power handling in amplifier and switch circuits.
• Wide Voltage Ratings: With a collector-emitter voltage of 60 V, it ensures safe operation in medium voltage applications.
• Military-Grade Reliability: Built to meet JAN (Joint Army-Navy) specifications, the transistor guarantees superior durability under harsh conditions.
• Low Noise Performance: Suitable for sensitive analog signal amplification due to optimized low noise characteristics.
• Thermal Stability: Operating temperature range up to 200??C supports applications in elevated temperature environments.

Typical Applications

• Precision analog amplification circuits requiring stable gain and low noise, such as audio preamplifiers and instrumentation amplifiers.
• Switching components in power regulation and control systems where reliable high current handling is critical.
• Military and aerospace electronics demanding components that conform to stringent reliability and environmental standards.
• Industrial control systems requiring robust, long-lasting transistors capable of sustained operation under thermal stress.

JAN2N3507A-Transistor Advantages vs Typical Alternatives

This transistor provides a distinct advantage over typical alternatives through its military-grade qualification, ensuring enhanced reliability and performance consistency. Its superior current and voltage ratings allow for flexible application across both high-power and precision analog designs. The TO-18 metal can package offers excellent thermal dissipation and mechanical strength, making it more durable than standard plastic-encapsulated transistors. These features combine to deliver dependable operation in challenging industrial and defense environments.

JAN2N3507A-Transistor Brand Info

The JAN2N3507A is a product originally developed to meet Joint Army-Navy (JAN) standards, indicating compliance with stringent military specifications for performance and reliability. It is commonly manufactured by leading semiconductor suppliers specializing in military and aerospace-grade components. This transistor is recognized for its high quality and durability in critical applications where long-term stability and environmental resilience are required. The JAN prefix underscores its heritage as a component trusted in defense systems, while its continued availability ensures engineers can integrate proven technology into modern designs.

FAQ

What type of transistor is the JAN2N3507A and what are its primary characteristics?

The JAN2N3507A is a PNP bipolar junction transistor designed for general-purpose amplification and switching. It features a maximum collector current of 2 A, collector-emitter voltage rating of 60 V, and operates reliably over a temperature range from -55