2N3019-Transistor Overview
The 2N3019 is a high-performance NPN bipolar junction transistor designed for low-noise, low-power amplification in a variety of electronic circuits. Known for its reliable switching and amplification capabilities, this transistor delivers stable operation within its voltage and current ratings. Engineers and sourcing specialists can leverage its consistent gain factor and robust construction to ensure dependable performance in analog and digital signal processing. Manufactured following stringent quality controls, the 2N3019 transistor is ideal for industrial and commercial electronics applications requiring precise control and efficient signal amplification. For detailed sourcing and technical support, visit IC Manufacturer.
2N3019-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 25 V |
| Collector-Base Voltage (VCBO) | 40 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 100 mA |
| Power Dissipation (Ptot) | 625 mW |
| Current Gain (hFE) | 40 to 200 (varies by test conditions) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package Type | TO-18 Metal Can |
2N3019-Transistor Key Features
- Low Noise Performance: Minimizes signal distortion, making it highly effective in audio and radio frequency amplification circuits.
- High Transition Frequency: Supports fast switching speeds up to approximately 100 MHz, suitable for high-frequency applications.
- Compact TO-18 Package: Enables easy integration into space-constrained designs while providing good thermal conduction.
- Wide Operating Voltage Range: Can operate safely up to 25 V collector-emitter voltage, accommodating a variety of low-power applications.
Typical Applications
- Low noise amplification in audio preamplifiers and radio frequency circuits, enhancing signal clarity and fidelity.
- Switching applications in small signal electronic devices, allowing efficient control of current flow.
- Signal amplification in industrial control systems requiring stable gain and low distortion.
- Use in sensor interface circuits where precise current gain and switching characteristics are essential.
2N3019-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of low noise, moderate current gain, and high transition frequency, making it superior to many standard small-signal transistors in sensitive amplification tasks. Its compact TO-18 metal package provides enhanced thermal reliability compared to plastic equivalents, while its voltage and current ratings suit a broad range of low-power industrial applications. These factors contribute to improved signal integrity and long-term stability, positioning it as a reliable choice versus typical alternatives.
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2N3019-Transistor Brand Info
The 2N3019 transistor is a classic semiconductor device originally developed and widely manufactured by multiple reputable suppliers in the industry. It is recognized for its robust performance and consistent quality across various production batches. Historically, key semiconductor manufacturers such as Fairchild Semiconductor and ON Semiconductor have produced this transistor model, ensuring availability and technical support globally. As a legacy device, the 2N3019 continues to be supported by current manufacturers, emphasizing its enduring relevance in both legacy and new designs.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current (IC) for this transistor is rated at 100 milliamps. Staying within this limit ensures reliable operation and prevents device damage during amplification or switching tasks.
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Can this transistor be used for high-frequency applications?
Yes, with a typical transition frequency of around 100 MHz, this transistor is suitable for many






