JAN2N2905AL-Transistor PNP Amplifier Transistor in TO-18 Metal Can Package – Fairchild

  • This transistor amplifies current, enabling efficient signal control in electronic circuits.
  • It operates with suitable voltage ratings, ensuring stable performance under typical load conditions.
  • The compact package reduces board space, facilitating dense circuit designs and easier integration.
  • Ideal for switching applications, it provides reliable operation in power regulation and signal modulation.
  • Manufactured to meet quality standards, it offers consistent performance and durability in various environments.
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JAN2N2905AL-Transistor Overview

The JAN2N2905AL is a high-performance PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Engineered to meet stringent military standards, this transistor ensures robust reliability and consistency under demanding operating conditions. Featuring a complementary structure with the widely used 2N2222A, it supports moderate power dissipation and voltage ratings, making it ideal for rugged industrial and defense electronics. The device is housed in a standard TO-18 metal can package, facilitating excellent thermal management and durability. For sourcing and detailed technical support, visit IC Manufacturer.

JAN2N2905AL-Transistor Technical Specifications

Parameter Value Unit
Transistor Type PNP
Collector-Emitter Voltage (VCEO) -60 V
Collector-Base Voltage (VCBO) -60 V
Emitter-Base Voltage (VEBO) -5 V
Collector Current (IC) -600 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 100?C300 (Typ. @ IC=150mA)
Transition Frequency (fT) 100 MHz
Junction Temperature (TJ) 200 ??C
Package Type TO-18 Metal Can

JAN2N2905AL-Transistor Key Features

  • High Voltage Tolerance: With a collector-emitter voltage rating of -60V, it provides reliable operation in medium-voltage circuits, reducing the risk of breakdown under transient conditions.
  • Moderate Power Dissipation: Supports up to 625mW power dissipation, enabling effective handling of moderate power loads without thermal failure.
  • Wide Current Gain Range: DC current gain between 100 and 300 ensures flexibility in amplification stages, enhancing signal integrity and linearity.
  • High Transition Frequency: Operating up to 100MHz, this transistor supports high-frequency switching and amplification tasks in communication and control systems.
  • Rugged TO-18 Package: The metal can package offers superior heat dissipation and mechanical durability, critical for industrial and military-grade reliability.

Typical Applications

  • Signal amplification in audio and low-power RF circuits, where stable gain and low noise are essential for clear signal processing.
  • Switching applications in control systems, enabling efficient on/off control of loads in industrial automation environments.
  • Complementary transistor pair configurations for push-pull amplifier designs, improving power efficiency and output linearity.
  • Military and aerospace electronics requiring components with stringent quality standards and consistent performance under harsh conditions.

JAN2N2905AL-Transistor Advantages vs Typical Alternatives

This transistor offers a balance of voltage tolerance, gain, and frequency response that exceeds many standard PNP transistors in similar classes. Its military-grade construction and TO-18 packaging enhance reliability and thermal performance, providing a distinct advantage in precision and durability over plastic-encapsulated alternatives. The wide current gain range supports versatile design integration, while its robust voltage and power handling improve circuit resilience, making it ideal for demanding industrial and defense applications.

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