JANTXV2N3499-Transistor High-Power NPN Switching Transistor in TO-220 Package

JANTXV2N3499-Transistor Overview

The JANTXV2N3499 transistor is a high-voltage, high-power NPN bipolar junction transistor designed for rugged and demanding electronic applications. Built to meet military standards (JAN specification), this transistor offers enhanced reliability, thermal stability, and performance under harsh conditions. It supports collector-emitter voltages up to 300V and collector currents of 10A, making it suitable for power amplification and switching tasks in industrial and defense electronics. Engineers and sourcing specialists will find this device ideal for robust designs requiring consistent gain and dependable operation. For more technical details and sourcing, visit IC Manufacturer.

JANTXV2N3499-Transistor Technical Specifications

JANTXV2N3499-Transistor Key Features

• High voltage and current capability: Supports up to 300 V and 10 A, enabling robust power switching and amplification in demanding circuits.
• Military-grade reliability: Designed to meet JAN standards, ensuring stable performance in harsh environments and extended temperature ranges.
• Wide operating temperature range: Functions reliably from ?65??C to +200??C, suitable for aerospace and industrial applications.
• TO-3 metal can package: Enhances thermal dissipation and mechanical durability, critical for high-power applications.

Typical Applications

• Power amplification in industrial and military RF and audio systems, where high voltage and current handling are essential for signal integrity and output power.
• Switching regulators and power converters requiring robust transistor operation under varying load and temperature conditions.
• Motor control circuits in industrial automation, benefiting from the transistor??s high current and power dissipation capability.
• High-reliability aerospace and defense electronics, where components must endure extreme environmental stresses and maintain performance.

JANTXV2N3499-Transistor Advantages vs Typical Alternatives

This transistor offers superior power handling and voltage ratings compared to typical commercial BJTs, making it a preferred choice for high-stress environments. Its military-grade qualification ensures enhanced reliability and thermal stability, reducing failure rates in critical systems. The TO-3 packaging provides excellent heat dissipation, improving operational longevity and efficiency versus plastic-encapsulated alternatives.

JANTXV2N3499-Transistor Brand Info

The JANTXV2N3499 is a military-spec transistor originally standardized under Joint Army-Navy (JAN) specifications, ensuring rigorous quality and performance requirements for defense and aerospace sectors. Manufactured by established semiconductor producers specializing in high-reliability discrete components, this transistor adheres to strict screening and burn-in processes. This ensures stable electrical characteristics and durability demanded by mission-critical applications. The device is widely recognized for its robustness and is a trusted component in legacy and modern high-power electronic designs.

FAQ

What are the maximum voltage and current ratings of this transistor?

This transistor supports a maximum collector-emitter voltage of 300 V and a collector current up to 10 A, enabling it to handle high-power applications safely within these limits.

In what package type is this transistor available, and why does it matter?

It is housed in a TO-3 metal can package, which is significant for its excellent thermal conductivity and mechanical strength, allowing better heat dissipation and durability in power-intensive environments.

What temperature range can this transistor reliably operate within?

The device is rated for junction temperatures from ?65??C to +200??C, making it suitable for extreme temperature conditions