JAN2N2907AP-Transistor-PIND PNP Bipolar Junction Transistor in PIND Package by ON Semiconductor

JAN2N2907AP-Transistor-PIND Overview

The JAN2N2907AP transistor is a high-performance PNP bipolar junction transistor designed primarily for switching and amplification applications in demanding industrial environments. Featuring a robust construction compliant with Joint Army-Navy (JAN) standards, it ensures enhanced reliability under harsh conditions, making it suitable for aerospace, military, and industrial control systems. This transistor offers dependable current handling capabilities and a complementary design to common NPN devices, facilitating seamless circuit integration. Available through IC Manufacturer, the device supports efficient power management and precise signal control required by engineers and sourcing specialists in critical electronic assemblies.

JAN2N2907AP-Transistor-PIND Technical Specifications

JAN2N2907AP-Transistor-PIND Key Features

• High Voltage Capability: Supports up to 60 V collector-emitter voltage, enabling operation in medium-power circuits with substantial voltage demands.
• Robust Current Handling: Handles collector currents up to 600 mA, suitable for switching moderate loads reliably in industrial applications.
• Wide Operating Temperature Range: Rated from -55??C to +200??C, ensuring stable performance in extreme environmental conditions.
• TO-18 Metal Can Package: Provides superior thermal conductivity and mechanical protection, enhancing longevity and reliability.
• High Gain Bandwidth Product: 100 MHz typical frequency response supports efficient signal amplification at moderate frequencies.
• JAN Qualification: Military-grade certification assures quality and consistency for critical aerospace and defense systems.

Typical Applications

• Signal amplification and switching in aerospace electronic control systems requiring high reliability and temperature tolerance.
• Industrial automation circuits where rugged transistor performance is critical for controlling actuators and relays.
• Military-grade electronic equipment demanding components with proven durability and precise switching characteristics.
• General-purpose amplification tasks in power supply regulation and driver stages for medium-power electronic modules.

JAN2N2907AP-Transistor-PIND Advantages vs Typical Alternatives

This transistor offers a combination of high voltage and current ratings with a rugged metal package, providing superior reliability and thermal management compared to standard plastic-encapsulated transistors. Its JAN military certification ensures tighter quality controls, making it a preferred choice for critical applications in aerospace and defense sectors. The wide operating temperature range and high gain bandwidth improve circuit stability and response speed, enhancing overall system performance over typical commercial alternatives.

JAN2N2907AP-Transistor-PIND Brand Info

The JAN2N2907AP is a product originally standardized under the Joint Army-Navy (JAN) specification, indicating its military-grade certification. This transistor is typically manufactured by established semiconductor suppliers specializing in high-reliability components for aerospace and defense industries. The JAN designation signifies compliance with stringent performance and quality standards, ensuring suitability for harsh environments and critical electronic systems. Such transistors are commonly sourced from reputable manufacturers who maintain rigorous production processes and traceability to support demanding industrial and military applications.

FAQ

What does the JAN prefix indicate in the transistor model?

The JAN prefix stands for Joint Army-Navy, indicating that the transistor meets military-grade standards for quality, reliability, and performance. Components with this designation undergo rigorous testing to ensure they can operate reliably under harsh environmental and electrical conditions typical in defense and aerospace applications.

What are the key electrical limits of this PNP transistor?

This transistor supports a maximum collector-em