JANTX2N3507-Transistor Overview
The JANTX2N3507 is a robust, high-voltage PNP bipolar junction transistor designed for military and aerospace applications requiring stringent reliability and performance standards. Engineered to handle collector-emitter voltages up to 100V and collector currents up to 10A, it provides dependable amplification and switching capabilities in demanding environments. With its hermetically sealed metal can package, this transistor ensures long-term stability and resistance to harsh conditions, making it ideal for rugged industrial uses. Manufactured to meet JAN (Joint Army-Navy) specifications, the device is trusted for critical defense and aerospace circuitry. For detailed sourcing and additional technical resources, visit IC Manufacturer.
JANTX2N3507-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | PNP Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 100 V |
| Collector-Base Voltage (VCBO) | 100 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 10 A |
| Power Dissipation (PD) | 115 W |
| DC Current Gain (hFE) | 20 to 70 (at IC = 4A) |
| Transition Frequency (fT) | 4 MHz (typical) |
| Package Type | Hermetically Sealed Metal Can (TO-3) |
JANTX2N3507-Transistor Key Features
- High voltage capability: Supports up to 100 V collector-emitter voltage, enabling use in power switching and amplification in high-voltage circuits.
- High current handling: Rated for up to 10 A collector current, suitable for medium to high power applications.
- Hermetic metal can packaging: Provides enhanced environmental protection, improving reliability in harsh or military-grade conditions.
- Wide DC current gain range: Gain between 20 and 70 offers flexibility for various amplification needs.
- Robust power dissipation: 115 W rating supports high power operations with appropriate heat sinking.
- Military-grade quality: Complies with JAN standards ensuring ruggedness and long-term durability.
- Thermal stability: Metal case design facilitates efficient heat dissipation, enhancing operational reliability.
Typical Applications
- Power amplification stages in military and aerospace communication equipment, where reliability and high voltage handling are critical.
- Switching elements in power supplies for industrial and defense systems requiring robust transistors capable of high current.
- Signal amplification in radar and avionics systems needing stable gain and rugged packaging for harsh environments.
- High-reliability control circuits in aerospace electronic modules operating under extreme temperatures and mechanical stress.
JANTX2N3507-Transistor Advantages vs Typical Alternatives
This transistor delivers superior performance in high-voltage and high-current applications compared to general-purpose alternatives due to its military-grade construction and hermetically sealed metal package. It offers enhanced reliability under harsh environmental conditions, ensuring consistent operation where sensitivity and durability are paramount. Its wide current gain range and robust power dissipation make it a versatile solution for demanding industrial and aerospace designs that require fault tolerance and long-term stability.
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JANTX2N3507-Transistor Brand Info
The JANTX2N3507 transistor is produced following stringent Joint Army-Navy (JAN) standards, a hallmark of quality and reliability in military and aerospace semiconductor devices. These specifications assure strict control over manufacturing processes, testing, and materials, resulting in components suitable for critical defense applications. The device is typically offered by established semiconductor manufacturers specializing in high-reliability
