JANTX2N3019-Transistor NPN Power Transistor in TO-66 Metal Can Package ?C Motorola

  • Acts as a high-speed switching device, enabling efficient control of electrical circuits in various systems.
  • Features a robust voltage rating that ensures stable operation under demanding electrical conditions.
  • Encased in a compact package, it offers board-space savings suitable for dense electronic assemblies.
  • Ideal for use in power regulation modules, enhancing system responsiveness and energy management.
  • Manufactured to meet stringent quality standards, promoting long-term reliability in critical applications.
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JANTX2N3019-Transistor Overview

The JANTX2N3019 transistor is a high-performance, bipolar junction transistor (BJT) designed for demanding amplification and switching applications. Featuring a robust collector-to-emitter voltage rating and substantial collector current capacity, it supports reliable operation in both analog and digital circuits. This transistor offers low noise and stable gain characteristics, making it suitable for precision signal processing and power control tasks. Its rugged construction ensures durability in harsh environments. Engineers and sourcing specialists will find this device valuable for industrial, military, and aerospace designs requiring dependable semiconductor components. For additional details and procurement, visit IC Manufacturer.

JANTX2N3019-Transistor Technical Specifications

Parameter Specification
Collector-Emitter Voltage (VCEO) 80 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 7 A (max)
Power Dissipation (PD) 75 W (max)
Gain Bandwidth Product (fT) 6 MHz (typical)
DC Current Gain (hFE) 20 to 70 (at IC = 3 A)
Transition Frequency 6 MHz (typical)
Operating Junction Temperature -65??C to +200??C

JANTX2N3019-Transistor Key Features

  • High collector current capability: Supports up to 7 A collector current, enabling robust power handling in switching and amplification circuits.
  • Wide voltage ratings: With a collector-emitter voltage of 80 V and collector-base voltage of 100 V, it is suitable for high-voltage industrial applications.
  • Stable DC gain: Provides a consistent current gain (hFE) range of 20 to 70, ensuring predictable performance in analog signal amplification.
  • High power dissipation: Rated for up to 75 W, allowing for efficient thermal management in demanding environments.
  • Extended operating temperature range: Functions reliably from -65??C to +200??C, ideal for aerospace and military applications requiring ruggedness.
  • Low noise figure: Enhances signal clarity in sensitive electronic circuits.
  • Robust construction: Designed to withstand mechanical and thermal stress, improving long-term reliability.

Typical Applications

  • Power amplification stages in industrial control systems, where high current and voltage handling are necessary for driving heavy loads.
  • Switching regulators and power supplies requiring dependable transistor operation under elevated voltages and temperatures.
  • Military and aerospace electronics that benefit from the transistor??s wide operating temperature range and enhanced reliability.
  • Audio frequency amplifiers and signal processing circuits that demand low noise and consistent gain characteristics.

JANTX2N3019-Transistor Advantages vs Typical Alternatives

This transistor offers a combination of high current capacity, wide voltage rating, and extended temperature tolerance that surpasses many standard BJTs. Its robust power dissipation and stable gain make it a reliable choice for industrial and military applications where precision and durability are critical. Compared to typical alternatives, it provides enhanced reliability under harsh environmental conditions and higher power margins, reducing the risk of failure in complex electronic assemblies.

JANTX2N3019-Transistor Brand Info

The JANTX2N3019 is a military-grade transistor originally developed under the JAN (Joint Army-Navy) standard, ensuring stringent quality and performance criteria. Such devices are typically manufactured by established semiconductor companies specializing in defense and aerospace components, ensuring traceability, ruggedness, and compliance with military specifications. The JAN

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