JANTX2N3501L-Transistor NPN Power Amplifier Transistor in TO-39 Metal Can Package

JANTX2N3501L-Transistor Overview

The JANTX2N3501L is a high-voltage, silicon NPN bipolar junction transistor (BJT) designed for rugged and reliable switching and amplification applications. Engineered to meet stringent military and industrial standards, this transistor supports collector-emitter voltages up to 100V and collector currents up to 1.5A, making it suitable for demanding environments. Its robust construction ensures long-term stability, enhanced gain characteristics, and dependable performance in power amplifier circuits and switching regulators. Sourcing specialists and engineers seeking a durable, high-performance transistor will find this device ideal for precision applications requiring consistent gain and voltage handling. For more detailed component sourcing, visit IC Manufacturer.

JANTX2N3501L-Transistor Technical Specifications

JANTX2N3501L-Transistor Key Features

• High voltage tolerance: Supports up to 100V collector-emitter voltage, enabling operation in high-voltage amplifier and switching circuits.
• Robust current handling: Capable of continuous collector currents up to 1.5A, ensuring reliable performance in power applications.
• Wide gain range: DC current gain between 20 and 70 allows flexibility for different amplification needs.
• High power dissipation: Maximum power rating of 30W supports demanding environments without thermal failure.
• Military-grade construction: Designed to meet rigorous reliability standards for long-term stability in critical industrial and defense applications.
• Thermal resilience: Operation up to 200??C junction temperature enables usage in harsh thermal conditions.

Typical Applications

• Power amplifier stages in audio and RF circuits requiring stable gain and high voltage handling for linear amplification.
• Switching regulators and power supply circuits where high voltage and moderate current capacity are essential for efficient operation.
• Industrial motor control circuits benefiting from rugged transistor construction to withstand transient loads and temperature variations.
• Military and aerospace systems demanding robust, reliable transistors capable of enduring extreme environmental stresses.

JANTX2N3501L-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of high voltage and current ratings with a robust power dissipation capability, making it more reliable than many standard BJTs in its class. Its military-grade qualification ensures enhanced durability and performance consistency under harsh conditions, which is critical for industrial and defense applications. The wide gain range facilitates versatile circuit design, reducing the need for multiple transistor types and simplifying inventory management for sourcing specialists.

JANTX2N3501L-Transistor Brand Info

The JANTX2N3501L is a military specification-grade transistor originally standardized by JEDEC and manufactured by multiple trusted semiconductor vendors specializing in rugged discrete components. The “JAN” prefix indicates compliance with Joint Army-Navy (JAN) quality requirements, ensuring that it meets stringent military standards for reliability, performance, and