JANTX2N3499-Transistor NPN Power Amplifier Transistor in TO-3 Package ?C ON Semiconductor

  • Switches or amplifies electrical signals, enabling efficient control in various electronic circuits.
  • Features high voltage tolerance, ensuring stable operation in demanding power environments.
  • Compact TO-3 metal can package provides durability and effective heat dissipation in tight spaces.
  • Ideal for power amplification tasks in audio devices, improving signal clarity and strength.
  • Manufactured to meet stringent quality standards, supporting consistent long-term performance.
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JANTX2N3499-Transistor Overview

The JANTX2N3499 is a high-performance silicon NPN bipolar junction transistor specifically designed for military and aerospace applications requiring enhanced reliability and ruggedness. This transistor operates with a collector-emitter voltage rating suitable for medium-power amplification and switching tasks. Its robust construction ensures stable operation under harsh environmental conditions, including temperature extremes and mechanical stress. With a guaranteed gain and breakdown voltage, this device is ideal for demanding electronic circuits requiring consistent performance. For sourcing and detailed technical inquiries, visit IC Manufacturer.

JANTX2N3499-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector Current (IC) 10 A
Gain Bandwidth Product (fT) 8 MHz
Current Gain (hFE) 40 to 120 (typical)
Collector-Base Voltage (VCBO) 140 V
Emitter-Base Voltage (VEBO) 5 V
Power Dissipation (Ptot) 115 W
Transition Frequency (fT) 8 MHz
Operating Temperature Range -65 to +200 ??C

JANTX2N3499-Transistor Key Features

  • High voltage capability: With a collector-emitter voltage rating of 100 V, it supports medium-power applications requiring voltage handling stability.
  • Robust current handling: The transistor can conduct collector currents up to 10 A, enabling effective control in power amplification and switching circuits.
  • Wide temperature range: Certified for operation from -65??C to +200??C, ensuring reliability in extreme environmental conditions critical for aerospace and military use.
  • Stable current gain: Provides a consistent hFE range between 40 and 120, delivering predictable amplification performance under varying load conditions.

Typical Applications

  • Military and aerospace power amplifiers requiring rugged transistors capable of sustained high voltage and current operation in harsh environments.
  • Switching circuits where reliability and thermal stability are critical under fluctuating operating conditions.
  • Industrial control systems that demand robust semiconductor devices able to maintain performance over wide temperature ranges.
  • High-frequency analog signal amplification in defense electronics where precise gain and power dissipation are essential.

JANTX2N3499-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current ratings combined with a broad operating temperature range, making it more reliable than many commercial-grade alternatives. Its military-grade construction ensures enhanced ruggedness and long-term stability in demanding applications. Compared to typical alternatives, it provides a more consistent gain and higher power dissipation capability, supporting critical industrial and defense systems that require dependable semiconductor solutions.

JANTX2N3499-Transistor Brand Info

The JANTX2N3499 is a JAN (Joint Army-Navy) qualified transistor, manufactured to stringent military standards. These devices are produced by established semiconductor manufacturers specializing in defense and aerospace components, ensuring compliance with MIL-STD requirements. The JAN prefix indicates rigorous quality assurance, traceability, and performance under severe conditions, making it a trusted choice for mission-critical applications.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current for this transistor is rated at 10 amperes

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