JAN2N3501L-Transistor NPN Power Amplifier in TO-3 Package by ON Semiconductor

JAN2N3501L-Transistor Overview

The JAN2N3501L transistor is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications in industrial and military-grade electronics. Featuring robust voltage and current handling capabilities, this transistor ensures reliable operation under demanding conditions. Its complementary construction and low noise characteristics make it suitable for precision analog circuits and power control systems. Manufactured to meet stringent military standards, the JAN2N3501L offers enhanced durability and consistency, making it ideal for critical environments. For detailed procurement and technical support, visit IC Manufacturer.

JAN2N3501L-Transistor Technical Specifications

JAN2N3501L-Transistor Key Features

• High Current Capacity: Supports collector currents up to 10 A, enabling effective power switching in demanding circuits.
• Robust Voltage Handling: Collector-emitter voltage rating of 60 V ensures safe operation in medium-voltage environments.
• Wide Operating Temperature Range: With junction temperatures up to 200??C, this transistor maintains performance in harsh thermal conditions.
• TO-3 Metal Can Package: Provides superior thermal dissipation and mechanical reliability, enhancing long-term device stability.

Typical Applications

• Power amplifiers in industrial control systems where reliable high current and voltage handling is critical for efficient operation and durability.
• Switching regulators requiring transistors with stable gain and high thermal tolerance for consistent power management.
• Audio amplification circuits benefiting from low noise and linear gain characteristics for improved sound fidelity.
• Military and aerospace electronics needing components qualified to stringent standards for ruggedness and reliability under extreme conditions.

JAN2N3501L-Transistor Advantages vs Typical Alternatives

This transistor provides superior power handling and temperature tolerance compared to typical small-signal alternatives. Its TO-3 metal can package ensures enhanced thermal management and mechanical robustness, reducing failure rates in demanding industrial and military applications. The combination of high current capacity and stable gain delivers reliable performance, making it a preferred choice where durability and precision are paramount.

JAN2N3501L-Transistor Brand Info

The JAN2N3501L is a military-grade transistor originally standardized under the Joint Army-Navy (JAN) specification, ensuring compliance with rigorous reliability and performance requirements. It is commonly manufactured by established semiconductor suppliers known for producing high-quality, rugged discrete components suitable for defense and aerospace markets. This transistor??s legacy and robust specification make it a trusted option for engineers seeking proven, long-life components.

FAQ

What type of transistor is the JAN2N3501L, and what are its primary electrical characteristics?

The JAN2N3501L is an NPN bipolar junction transistor characterized by a collector-emitter voltage rating of 60 V and a maximum collector current of 10 A. It offers a DC current gain ranging from 20 to 70 and supports power dissipation up to 75 W, making it suitable for medium-power amplification and switching.

What packaging does this transistor come in, and why is it important?

This transistor is housed in a TO-3 metal can package, which provides excellent thermal conductivity and mechanical strength. This packaging helps dissipate heat efficiently, allowing the transistor to operate reliably at higher power levels and elevated junction temperatures up to 200??C.

Can the JAN2N3501L be used in high-temperature environments?

Yes, it is