The JANTXV2N2369A-Transistor is a high-performance bipolar junction transistor (BJT) designed for switching and amplification applications in demanding industrial and military environments. This transistor offers a collector-emitter voltage rating of 30V and a continuous collector current of up to 0.8A, delivering robust power handling with reliable operation under harsh conditions. The device is housed in a TO-18 metal can package, providing excellent thermal stability and durability. Its low noise characteristics and high gain bandwidth product make it suitable for precision analog circuits and switching tasks. For engineers and sourcing specialists seeking dependable semiconductor components, the JANTXV2N2369A supports critical performance needs with military-grade quality, as documented by IC Manufacturer.
JANTXV2N2369A-Transistor Technical Specifications
Parameter
Specification
Unit
Collector-Emitter Voltage (VCEO)
30
V
Collector-Base Voltage (VCBO)
60
V
Emitter-Base Voltage (VEBO)
5
V
Collector Current – Continuous (IC)
0.8
A
Power Dissipation (PD)
0.625
W
Transition Frequency (fT)
100
MHz
DC Current Gain (hFE)
100 – 300
(typical)
Operating Temperature Range
-55 to +125
??C
JANTXV2N2369A-Transistor Key Features
High voltage rating: Supports up to 30V collector-emitter voltage, enabling efficient switching in mid-power circuits.
Robust current handling: Continuous collector current of 0.8A allows reliable operation in moderate load applications.
Wide operating temperature range: From -55??C to +125??C, suitable for harsh environments and military-grade requirements.
Low noise and high gain bandwidth: Ideal for precision amplification and high-frequency switching tasks.
Durable TO-18 metal package: Provides enhanced thermal dissipation and mechanical reliability.
Typical Applications
High-frequency switching and amplification circuits requiring stable gain and low noise, such as signal processing modules in defense electronics.
General-purpose amplification in analog signal conditioning and interface circuits.
Robust industrial control systems where reliable transistor operation under temperature extremes is critical.
Low to medium power switching applications in aerospace and military communication equipment.
JANTXV2N2369A-Transistor Advantages vs Typical Alternatives
This transistor offers superior reliability and performance in environments where temperature and electrical stress are significant factors. Its military-grade certification ensures strict quality control and consistency, outperforming typical commercial transistors in sensitivity, noise level, and thermal stability. The metal TO-18 package enhances heat dissipation compared to plastic encapsulated alternatives, ensuring longer device life and better integration in high-reliability systems.
The JANTXV2N2369A is a military specification variant of the widely used 2N2369 transistor, produced by multiple certified semiconductor manufacturers adhering to JAN (Joint Army-Navy) quality standards. This brand classification signifies rigorous testing and reliability for defense and aerospace applications. The product is known for meeting MIL-PRF-19500 requirements, ensuring enhanced durability, stable electrical characteristics, and traceability. It is a preferred choice for engineers seeking a dependable transistor with a proven track record in mission-critical systems.
