2N5114E4-Transistor NPN Amplifier Transistor in TO-39 Metal Can Package – Onsemi

2N5114E4-Transistor Overview

The 2N5114E4 is a high-performance NPN bipolar junction transistor designed for reliable amplification and switching applications. With robust voltage and current handling capabilities, this transistor delivers consistent gain and low noise, making it suitable for various analog and digital circuits. Engineered for industrial and commercial use, it offers stable operation under diverse environmental conditions. Its complementary characteristics and predictable behavior simplify circuit design, ensuring enhanced efficiency and durability in semiconductor applications. For sourcing and technical support, visit IC Manufacturer.

2N5114E4-Transistor Technical Specifications

2N5114E4-Transistor Key Features

• High voltage capability: Supports collector-emitter voltages up to 100 V, enabling use in medium-power switching and amplification circuits.
• Wide current range: Handles collector currents up to 600 mA, suitable for driving moderate loads efficiently.
• Low noise performance: Ensures clean signal amplification in audio and RF applications, improving overall system integrity.
• High gain variability: Offers a broad DC current gain range (60 to 300), facilitating flexible circuit design and tuning.
• Compact TO-92 package: Enables easy integration into space-constrained board layouts, supporting versatile industrial applications.

Typical Applications

• Signal amplification in audio frequency circuits where low noise and moderate power handling are critical.
• Switching devices in power management and control systems requiring reliable operation at voltages up to 100 V.
• Driver stages for relay and solenoid controls in industrial automation, benefiting from high gain and current capacity.
• General-purpose amplification in analog circuits, including sensor interfaces and instrumentation modules.

2N5114E4-Transistor Advantages vs Typical Alternatives

This transistor provides a balanced combination of voltage tolerance, current capacity, and gain that outperforms many standard small-signal transistors in its class. Its low noise and high gain range make it ideal for precision amplification, while the 100 V rating extends its application scope beyond low-voltage devices. Additionally, the TO-92 package ensures easy handling and board placement, offering cost-effective reliability and performance advantages over typical alternatives.

2N5114E4-Transistor Brand Info

The 2N5114E4 transistor is a widely recognized device originally standardized by JEDEC and manufactured by multiple semiconductor suppliers. It is commonly available from reputable brands specializing in discrete semiconductor components. These manufacturers ensure strict quality control and adherence to industry standards, delivering consistent performance suitable for industrial, commercial, and educational applications. The device??s long-standing presence in the market underscores its reliability and versatility in electronic design.

FAQ

What type of transistor is the 2N5114E4?

The 2N5114E4 is an NPN bipolar junction transistor (BJT) designed primarily for low-noise, general-purpose amplification and switching applications. It features a standard TO-92 package and is suitable for a wide range of analog and digital circuits.

What are the maximum voltage ratings of this transistor?

This transistor supports a collector-emitter voltage (V_CEO) of up to 100 V, a collector-base voltage (V_CBO) of 120 V, and an emitter-base voltage (V_EBO