JANTX2N1716S-Transistor – NPN Power Transistor, TO-3 Package, JAN Military Grade

  • This transistor facilitates efficient switching and amplification in electronic circuits, enhancing overall device performance.
  • It features a voltage rating suitable for moderate power applications, ensuring stable operation under typical stress conditions.
  • The compact package design allows for board-space savings, making it ideal for dense circuit layouts.
  • Used in power regulation modules, it helps maintain consistent output voltage, improving system reliability.
  • Manufactured to meet rigorous quality standards, it offers dependable long-term operation in various environments.
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JANTX2N1716S-Transistor Overview

The JANTX2N1716S is a high-reliability silicon NPN bipolar junction transistor designed for demanding military and aerospace applications. Engineered with a robust hermetic metal can package, this transistor delivers consistent performance under extreme environmental conditions. It features a medium power rating and moderate gain characteristics, making it suitable for amplification and switching tasks in critical systems. The device is manufactured to stringent JAN (Joint Army-Navy) standards, ensuring durability, long operational life, and stable electrical parameters. Sourcing this transistor supports applications where reliability and precision are non-negotiable. For detailed specifications and sourcing options, refer to IC Manufacturer.

JANTX2N1716S-Transistor Technical Specifications

Parameter Value Unit
Type NPN Bipolar Junction
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 3 A
Power Dissipation (Ptot) 30 W
DC Current Gain (hFE) 40?C160
Transition Frequency (fT) 50 MHz
Package Type Hermetic Metal Can (TO-39)
Operating Temperature Range -55 to +125 ??C

JANTX2N1716S-Transistor Key Features

  • High voltage and current handling: Supports up to 60 V collector-emitter voltage and 3 A collector current, enabling robust switching and amplification in medium power circuits.
  • Wide DC current gain range: Gain between 40 and 160 allows flexibility in circuit design for various amplification needs.
  • Hermetic metal can packaging: Ensures superior environmental protection and long-term reliability in harsh conditions typical of military and aerospace environments.
  • Military-grade reliability: Manufactured to JAN standards, guaranteeing performance consistency across temperature extremes and mechanical stress.

Typical Applications

  • Used in military-grade amplification circuits where stable gain and ruggedness are critical under extreme environmental conditions.
  • Suitable for aerospace electronic systems requiring high reliability and tolerance to wide temperature ranges.
  • Ideal for power switching applications in defense communication systems due to its robust current and voltage specifications.
  • Can be integrated into control and driver circuits demanding hermetic sealing and long operational lifetimes.

JANTX2N1716S-Transistor Advantages vs Typical Alternatives

This transistor offers enhanced durability with its hermetic metal can package and military-standard certification, outperforming typical commercial-grade transistors in reliability and environmental resistance. Its moderate power and voltage ratings combined with a broad current gain range provide precise control and efficient operation. These factors make it a preferred choice for applications where failure is not an option, offering superior sensitivity, stability, and ruggedness compared to standard industrial transistors.

JANTX2N1716S-Transistor Brand Info

The JANTX2N1716S is produced by reputable manufacturers specializing in military and aerospace-grade components. The “JAN” prefix denotes compliance with the Joint Army-Navy specifications, ensuring stringent quality control and traceability. This transistor is part of a legacy series known for ruggedness, stable electrical performance, and

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