JANSR2N2222AUBC-Transistor NPN Switching Amplifier in TO-92 Package ?C JAN Military Grade

  • This transistor efficiently amplifies and switches electronic signals, enabling precise control in circuits.
  • Its maximum collector current supports stable operation under typical load conditions.
  • The compact package design minimizes board space, facilitating dense circuit layouts.
  • Ideal for switching applications in low-power devices, it helps manage energy consumption effectively.
  • Manufactured to meet quality standards, ensuring consistent performance and long-term reliability.
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JANSR2N2222AUBC-Transistor Overview

The JANSR2N2222AUBC is a high-performance NPN bipolar junction transistor (BJT) designed to deliver reliable switching and amplification in a variety of industrial and electronic applications. Featuring robust maximum voltage and current ratings, this transistor supports efficient operation in moderate power circuits. Its low saturation voltage and fast switching speed make it ideal for signal processing and driver stages. Manufactured to stringent military-grade standards, it offers enhanced durability and thermal stability. Engineers and sourcing specialists will find this transistor a dependable choice for high-reliability environments through IC Manufacturer.

JANSR2N2222AUBC-Transistor Technical Specifications

Parameter Specification
Device Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (Vceo) 40 V
Collector-Base Voltage (Vcbo) 75 V
Emitter-Base Voltage (Vebo) 6 V
Continuous Collector Current (Ic) 800 mA
Power Dissipation (Pd) 625 mW
Transition Frequency (fT) 250 MHz
Gain Bandwidth Product High (Typical hFE up to 300)
Package Type TO-18 Metal Can

JANSR2N2222AUBC-Transistor Key Features

  • High Voltage and Current Handling: Supports up to 40 V and 800 mA, ensuring reliable performance in switching and amplification tasks.
  • Fast Switching Speed: Transition frequency of 250 MHz optimizes the device for high-frequency applications and signal processing.
  • Military-Grade Quality: Manufactured to meet stringent standards for enhanced durability and thermal stability in demanding environments.
  • Low Saturation Voltage: Minimizes power loss during conduction, improving overall circuit efficiency and heat management.

Typical Applications

  • Signal amplification in audio and communication circuits requiring reliable gain and frequency response.
  • Switching applications in industrial control systems where fast response and robustness are essential.
  • Driver transistor for relay, LED, and low-power motor control circuits requiring consistent current handling.
  • General-purpose transistor used in test equipment and instrumentation for accurate signal switching and amplification.

JANSR2N2222AUBC-Transistor Advantages vs Typical Alternatives

This transistor offers superior reliability and thermal stability compared to typical general-purpose BJTs. Its military-grade construction ensures consistent performance under harsh environmental conditions. The combination of a high transition frequency and low saturation voltage provides efficient switching and amplification. These features make it an excellent choice for engineers seeking enhanced durability without compromising on electrical performance.

JANSR2N2222AUBC-Transistor Brand Info

The JANSR2N2222AUBC transistor is produced under the JAN (Joint Army-Navy) certification, signifying adherence to rigorous military specifications for semiconductor devices. These standards guarantee enhanced quality control, reliability, and extended operating temperature ranges compared to commercial-grade transistors. This specific model is a variant of the popular 2N2222 transistor family, known for its versatility in signal switching and amplification. Its metal TO-18 package further supports improved thermal dissipation and mechanical ruggedness, making it suitable for defense, aerospace, and industrial electronics.

FAQ

What are the key electrical limits I should consider when using this transistor?

Key limits include a maximum collector-emitter voltage of 40 V and a continuous collector current of 800 mA. Staying within these values ensures safe operation and prevents device damage. Additionally, the power dissipation rating of 625 mW must be observed to avoid thermal overload.

Can this transistor be used in high-frequency switching applications?

Yes, with a transition frequency of 250 MHz, this transistor supports high-frequency switching and signal amplification. This makes it suitable for RF circuits and fast digital switching tasks.

How does the metal TO-18 package benefit the transistor’s performance?

The TO-18 metal can package provides superior heat dissipation and mechanical protection compared to plastic packages. This improves thermal stability and enhances reliability, especially

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