JANTX2N1715-Transistor Overview
The JANTX2N1715 transistor is a high-performance NPN silicon transistor designed for robust power amplification and switching applications. Constructed to meet rigorous military standards, this transistor delivers reliable operation under demanding environmental conditions. It features a high collector-emitter voltage rating and substantial collector current capacity, making it suitable for industrial and defense electronics where durability and consistency are critical. Its complementary electrical characteristics ensure stable operation in linear and switching modes, supporting efficient power management and signal amplification. Engineers and sourcing specialists will find this device ideal for precision control in power regulation circuits. Available through IC Manufacturer, it ensures quality and traceability essential for mission-critical systems.
JANTX2N1715-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Silicon Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector-Base Voltage (VCBO) | 75 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 3 A |
| Power Dissipation (Ptot) | 30 W |
| DC Current Gain (hFE) | 40 ?C 120 (at IC=1 A) |
| Transition Frequency (fT) | 4 MHz (typical) |
| Package Type | TO-3 Metal Can |
JANTX2N1715-Transistor Key Features
- High current capacity: Supports up to 3 A collector current, enabling effective handling of moderate power loads in switching and amplification tasks.
- Robust voltage rating: Withstands collector-emitter voltages up to 60 V, allowing reliable operation in a wide range of power supply configurations.
- Military-grade construction: Built to stringent JANTX standards, offering enhanced reliability for aerospace, defense, and industrial applications.
- Wide DC current gain range: Provides flexibility in circuit design by accommodating gains from 40 to 120, improving signal amplification precision.
Typical Applications
- Power amplification stages in military and aerospace communication equipment, where durability and signal integrity are essential.
- Industrial motor control circuits requiring reliable switching under moderate power and harsh environments.
- Switching regulators and power supply modules demanding robust thermal handling and voltage tolerance.
- General-purpose transistor applications in environments that require compliance with military-grade specifications.
JANTX2N1715-Transistor Advantages vs Typical Alternatives
This transistor offers enhanced reliability and higher power dissipation capability compared to standard commercial transistors due to its JANTX military-grade certification. It excels in applications demanding stable gain and robust voltage handling, making it superior for critical industrial and defense electronics. Its metal can TO-3 package ensures improved thermal dissipation versus plastic packages, increasing operational lifespan and performance under stress.
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JANTX2N1715-Transistor Brand Info
The JANTX2N1715 is a military-grade transistor originally standardized by JEDEC and produced by multiple manufacturers under the JANTX designation, which stands for military-quality transistors built to rigorous temperature and reliability standards. These devices comply with MIL-STD-750 test methods, guaranteeing performance in extreme environments. The JANTX2N1715 is widely recognized across aerospace and defense sectors for its dependable construction and consistent electrical characteristics, ensuring trusted operation in critical systems.
FAQ
What is the maximum collector current rating of the JANTX2N1715 transistor?
The maximum collector current this transistor can handle is 3 amperes. This rating allows it to manage moderate power levels suitable for switching and amplification tasks in demanding industrial and defense applications.
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What package type does the JANTX2N1715 come in?
This transistor is housed in a TO-3 metal can package. The TO-3 offers excellent heat dissipation and mechanical robustness, making it ideal for high-reliability and high-power environments.







