JANTXV2N1717S-Transistor Overview
The JANTXV2N1717S is a high-reliability NPN silicon transistor designed for demanding aerospace, military, and industrial applications requiring robust performance and extended life cycles. Featuring a metal-can hermetic package, this transistor ensures superior thermal stability and environmental protection. It supports medium power switching and amplification tasks with a complementary balance of gain and voltage ratings. Manufactured to stringent JAN (Joint Army-Navy) standards, it offers guaranteed electrical characteristics for critical systems. Engineers sourcing components for rugged electronics will find this transistor ideal due to its proven durability and consistent operation under harsh conditions. More detailed information is available at IC Manufacturer.
JANTXV2N1717S-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Silicon Bipolar Junction Transistor |
| Collector-Emitter Voltage (Vceo) | 80 V |
| Collector-Base Voltage (Vcbo) | 100 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 500 mA |
| Power Dissipation (Ptot) | 1 W (at 25??C) |
| DC Current Gain (hFE) | 40 to 100 (at Ic = 10 mA) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package | Hermetic TO-18 Metal Can |
JANTXV2N1717S-Transistor Key Features
- Hermetic metal-can package: Provides excellent environmental resistance, ensuring reliable operation in harsh and high-reliability aerospace and military settings.
- High voltage ratings up to 100 V: Enables use in moderate power switching and amplification circuits without compromising device integrity.
- Stable current gain (hFE) range: Offers predictable amplification performance for sensitive analog and digital circuit designs.
- Qualified to JAN standards: Guarantees compliance with military-grade quality and testing protocols, supporting mission-critical applications.
Typical Applications
- Switching and amplification in avionics and aerospace electronic control systems, where reliability and thermal stability under variable conditions are essential.
- Military communications equipment requiring rugged components with consistent gain and voltage handling.
- Industrial instrumentation circuits demanding robust transistor performance for sensor signal conditioning and low-medium power amplification.
- High-reliability embedded systems in harsh environments where hermetic packaging prevents moisture ingress and corrosion.
JANTXV2N1717S-Transistor Advantages vs Typical Alternatives
This transistor combines high voltage capability and a robust hermetic metal-can package, offering superior reliability compared to plastic-encapsulated alternatives. Its JAN qualification ensures strict testing, making it ideal for environments where failure is not an option. The stable gain characteristics and moderate power handling provide engineers with a dependable component that balances performance and ruggedness, optimizing system longevity and minimizing downtime.
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JANTXV2N1717S-Transistor Brand Info
The JANTXV2N1717S transistor is manufactured under the Joint Army-Navy (JAN) standard, historically produced by leading semiconductor suppliers specializing in military-grade components. The JAN designation indicates rigorous screening and qualification processes for defense and aerospace sectors. This product aligns with the legacy of high-quality, reliable transistors designed for critical applications, supported by manufacturers known for their commitment to robust semiconductor solutions in industrial and military electronics.
FAQ
What makes the JANTXV2N1717S suitable for aerospace and military use?
The transistor??s hermetic metal-can packaging offers excellent protection against moisture, dust, and mechanical stress. Coupled with its JAN qualification, it undergoes strict testing to meet military standards, ensuring reliable performance in extreme environmental and operational conditions typical in aerospace and defense applications.
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Can this transistor be used in high-frequency switching circuits?
Yes, with a typical transition frequency (fT) around 100 MHz, this device supports moderate high-frequency operation. While not intended for very high GHz ranges, it is well-suited for common switching and amplification tasks in industrial and military electronics.
What are the typical power dissipation limits for this device?
The device can
