JAN2N7370-Darlington Transistor – High Voltage Amplifier, TO-126 Package by ON Semiconductor

JAN2N7370-Darlington Overview

The JAN2N7370-Darlington is a high-performance silicon NPN Darlington transistor optimized for industrial and military applications requiring robust switching and amplification. Featuring a high voltage rating and substantial current gain, this transistor provides reliable operation under demanding conditions. Its design ensures low saturation voltage and high gain, making it ideal for power amplification and switching circuits. With a JAN (Joint Army-Navy) qualification, this device meets stringent military standards for quality and consistency, supporting critical applications that demand durability and precision. For detailed sourcing and technical support, visit IC Manufacturer.

JAN2N7370-Darlington Technical Specifications

JAN2N7370-Darlington Key Features

• High Current Gain: Provides a minimum gain of 1000, enabling efficient amplification with minimal input current.
• High Voltage Tolerance: Collector-emitter voltage up to 100 V supports use in high-voltage switching and amplification circuits.
• Robust Power Dissipation: Can handle up to 30 W, ensuring stability under heavy load conditions common in industrial environments.
• Wide Operating Temperature Range: Suitable for harsh environments, operating reliably between -65??C and +200??C.
• Military-Grade Reliability: JAN qualification guarantees consistent performance and quality for mission-critical applications.

Typical Applications

• Power amplification stages in industrial control systems, where high gain and reliable switching are essential.
• Switching regulators and power converters requiring robust transistors able to handle high voltage and current.
• Relay drivers and solenoid controls in automotive and aerospace systems that demand durability and precision.
• General-purpose amplification in audio and instrumentation circuits benefiting from the device??s high gain and low saturation voltage.

JAN2N7370-Darlington Advantages vs Typical Alternatives

This Darlington transistor offers superior current gain and voltage handling compared to standard bipolar transistors, reducing the need for multiple amplification stages and minimizing input drive requirements. Its robust power dissipation and military-grade certification ensure enhanced reliability and longevity in harsh industrial environments. The device’s low saturation voltage translates to improved efficiency in switching applications, making it a preferred choice over typical alternatives lacking these combined attributes.

JAN2N7370-Darlington Brand Info

The JAN2N7370-Darlington transistor is produced under the JAN (Joint Army-Navy) military specification, ensuring stringent quality and reliability standards. Devices meeting JAN criteria are manufactured to rigorous testing protocols for stable operation over extended temperature ranges and under mechanical stress. This product is commonly offered by legacy semiconductor manufacturers specializing in military and industrial-grade components. The JAN marking certifies adherence to MIL-PRF-19500 standards, making the device a trusted solution in defense and aerospace sectors where dependable performance is non-negotiable.

FAQ

What is the maximum collector current of this Darlington transistor?

The maximum collector current rating is 4 amperes, allowing the device to handle substantial load currents typical in power amplification and switching applications.

Can this transistor operate reliably at high temperatures?

Yes, the device supports an operating temperature range from -65??C to +200??C, making it suitable for extreme thermal environments found in industrial and military systems.

What package type does the JAN2N7370-Darlington use?

This transistor is housed in a TO-3