JANSF2N7373-Transistor NPN Bipolar Junction Transistor in TO-92 Package by JAN

  • This transistor amplifies electrical signals, enabling efficient control of current in various circuits.
  • Its specified current rating ensures reliable performance under typical operating conditions.
  • The compact package type supports space-saving designs on densely populated circuit boards.
  • Ideal for switching applications, it helps improve response times and overall device efficiency.
  • Manufactured under strict quality standards to maintain consistent functionality and durability.
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JANSF2N7373-Transistor Overview

The JANSF2N7373-Transistor is a high-performance NPN bipolar junction transistor engineered for precision switching and amplification in industrial and military-grade applications. Rated for robust operation with a high collector-emitter voltage and stable current gain, this device ensures reliable performance under demanding conditions. Its sturdy construction aligns with stringent military standards, making it ideal for aerospace, defense, and high-reliability electronics. Sourced from IC Manufacturer, the transistor delivers consistent gain characteristics, low saturation voltage, and dependable gain bandwidth product for seamless integration into complex electronic circuits.

JANSF2N7373-Transistor Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (Vceo) 80 V
Collector Current (Ic) 3 A
Gain Bandwidth Product (fT) 150 MHz
DC Current Gain (hFE) 40 to 160
Power Dissipation (Ptot) 30 W
Transition Frequency 150 MHz
Package Type TO-39 Metal Can
Operating Temperature Range -65??C to +200??C

JANSF2N7373-Transistor Key Features

  • High voltage tolerance: Supports collector-emitter voltages up to 80 V, enabling use in circuits requiring robust voltage handling.
  • Elevated current capacity: Handles collector currents up to 3 A, suitable for power amplification and switching applications without thermal degradation.
  • Wide gain bandwidth: 150 MHz transition frequency ensures efficient high-speed switching and amplification, critical for RF and pulse circuits.
  • Military-grade reliability: Constructed to meet strict MIL-STD requirements, providing consistent performance across harsh environmental conditions.

Typical Applications

  • Military and aerospace analog circuits where reliable high-voltage, high-current switching is essential for mission-critical systems.
  • Power amplifiers requiring stable gain and high power dissipation capacity for efficient signal amplification.
  • Signal switching in industrial control systems, benefiting from its rugged package and thermal durability.
  • High-frequency driver stages in communication equipment where gain bandwidth and low distortion are important.

JANSF2N7373-Transistor Advantages vs Typical Alternatives

This transistor offers superior voltage and current handling characteristics compared to standard discrete transistors, combined with a wider operating temperature range and military-grade packaging. It provides enhanced reliability in critical applications due to stringent quality controls and consistent electrical parameters, making it preferable for engineers sourcing components for high-reliability and power-intensive environments.

JANSF2N7373-Transistor Brand Info

The JANSF2N7373-Transistor is a product historically associated with manufacturers specializing in defense and aerospace electronic components. The “JAN” prefix indicates compliance with Joint Army-Navy specifications, ensuring the device meets military standards for quality and reliability. This transistor is typically offered by established semiconductor suppliers known for producing ruggedized discrete components designed to withstand extreme conditions. It is widely recognized for its proven track record in mission-critical applications requiring durability and performance consistency.

FAQ

What distinguishes the JANSF2N7373-Transistor from commercial-grade transistors?

This transistor is manufactured to meet stringent military specifications, including extended temperature ranges, higher mechanical robustness, and tighter electrical parameter controls. These characteristics ensure dependable operation in harsh environments where commercial-grade devices might fail.

Can this transistor be used in RF amplification applications?

Yes, with a gain bandwidth product of 150 MHz, it is suitable for moderate frequency RF amplification and switching tasks, providing good gain and speed performance in communication equipment.

What packaging does the device come in, and why is it important?

The transistor is housed in a TO-39 metal can package, offering excellent thermal conductivity and mechanical protection. This packaging enhances heat dissipation and contributes to the device??s reliability in high-power, high-temperature applications.

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What is the maximum collector current rating, and how does it affect circuit design?

The device can handle continuous collector currents

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