The JAN2N2814 transistor is a high-performance NPN bipolar junction transistor designed for switching and amplification applications in industrial and military-grade electronics. Known for its robust construction and reliable operation under elevated temperatures and stresses, this transistor supports collector currents up to 3A and a collector-emitter voltage rating of 100V. Its high gain and fast switching capabilities make it suitable for power control circuits, signal amplification, and driver stages. Sourced from IC Manufacturer, the device adheres to stringent military standards, ensuring durability and consistent performance in demanding environments.
JAN2N2814-Transistor Technical Specifications
Parameter
Specification
Transistor Type
NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO)
100 V
Collector-Base Voltage (VCBO)
100 V
Emitter-Base Voltage (VEBO)
5 V
Collector Current (IC)
3 A (continuous)
Power Dissipation (PD)
30 W (maximum)
DC Current Gain (hFE)
40 to 320 (depending on collector current)
Transition Frequency (fT)
100 MHz (typical)
Package Type
TO-18 Metal Can
Operating Junction Temperature (TJ)
-65??C to +200??C
JAN2N2814-Transistor Key Features
High collector current capability: Supports up to 3A continuous current, enabling efficient handling of power loads in switching applications.
Wide voltage rating: Withstands up to 100V collector-emitter voltage, providing flexibility for various industrial circuits requiring moderate voltage levels.
Military-grade reliability: Built to comply with JAN (Joint Army-Navy) standards, ensuring robust performance in harsh operating environments.
High transition frequency: Typical fT of 100 MHz allows for fast switching speeds, enhancing signal amplification efficiency in RF and high-speed circuits.
Typical Applications
Power amplification stages in communication equipment, leveraging its high gain and voltage handling capabilities to improve signal fidelity and output power.
Switching regulators and power control circuits in industrial automation systems, where reliability and thermal resilience are essential.
Driver stages for relays and solenoids, benefiting from the transistor??s high collector current capacity and fast switching performance.
Military and aerospace electronic systems requiring components that meet stringent environmental and performance standards for mission-critical operations.
JAN2N2814-Transistor Advantages vs Typical Alternatives
This transistor offers superior robustness and reliability compared to standard commercial alternatives, primarily due to its compliance with military-grade JAN standards. Its higher collector current capacity and voltage ratings enable integration into demanding industrial and aerospace applications. The metal can TO-18 package enhances thermal dissipation and mechanical durability, ensuring long-term operation under elevated temperatures and vibration conditions. These advantages translate into improved accuracy and stability in power amplification and switching roles.
The JAN2N2814 transistor is typically manufactured by leading semiconductor producers specializing in military and industrial-grade components. The JAN prefix indicates compliance with the Joint Army-Navy certification, a U.S. military standard that guarantees rigorous testing for performance under extreme environmental conditions. This transistor belongs to a family of devices recognized for their ruggedness, high reliability, and suitability for defense, aerospace, and industrial automation sectors. Its consistent quality and adherence to strict specifications make it a trusted choice among engineers and sourcing specialists worldwide.
